PNP Plastic Encapsulate Transistor in SOT 23 Package JUXING S8550 for General Purpose Applications

Key Attributes
Model Number: S8550
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
150MHz
Type:
PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
S8550
Package:
SOT-23
Product Description

Product Overview

The S8550 is a PNP Plastic-Encapsulate Transistor in a SOT-23 package. It is complementary to the S8050 and is designed for general-purpose applications with a collector current of up to 0.5A.

Product Attributes

  • Package Type: SOT-23
  • Transistor Type: PNP
  • Marking: 2TY
  • Brand: Not specified
  • Origin: Not specified
  • Material: Plastic-Encapsulate
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

ParameterSymbolTest ConditionsMinMaxUnit
MAXIMUM RATINGS
Collector-Base VoltageVCBO-40V
Collector-Emitter VoltageVCEO-25V
Emitter-Base VoltageVEBO-5V
Collector Current - ContinuousIC-0.5A
Collector Power DissipationPCTa=250.3W
Junction TemperatureTj150
Storage TemperatureTstg-55150
ELECTRICAL CHARACTERISTICS
Collector-base breakdown voltageV(BR)CBOIC = -100A, IE=0-40V
Collector-emitter breakdown voltageV(BR)CEOIC =-1mA, IB=0-25V
Emitter-base breakdown voltageV(BR)EBOIE= -100A, IC=0-5V
Collector cut-off currentICBOVCB= -40V, IE=0-0.1A
Collector cut-off currentICEOVCE= -20V, IB=0-0.1A
Emitter cut-off currentIEBOVEB= -3V, IC=0-0.1A
DC current gainhFE(1)VCE= -1V, IC= -50mA120400
DC current gainhFE(2)VCE= -1V, IC= -500mA50
Collector-emitter saturation voltageVCE(sat)IC=-500mA, IB= -50mA-0.6V
Base-emitter saturation voltageVBE(sat)IC=-500mA, IB= -50mA-1.2V
Transition frequencyfTVCE= -6V, IC= -20mA, f=30MHz150MHz

2410121531_JUXING-S8550_C3011094.pdf

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