N Channel Power MOSFET JUXING 7N50 Featuring High Switching Speed and Excellent Heat Dissipation
Key Attributes
Model Number:
7N50
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
7A
RDS(on):
900mΩ@10V
Operating Temperature -:
-55℃~+150℃@(Tj)
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Number:
1 N-channel
Pd - Power Dissipation:
32.9W
Mfr. Part #:
7N50
Package:
TO-252
Product Description
Product Overview
The 7N50 is an N-Channel Mode Power MOSFET designed for power switching applications. It offers an excellent package for good heat dissipation, high switching speed, and is 100% avalanche tested. This MOSFET is suitable for various power switching applications.
Product Attributes
- Product ID: 7N50
- Package: TO-252
- Mode: N-Channel
- Brand: XXXX (implied from marking)
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Maximum Ratings | VDS | Drain-Source Voltage | 500 | V | ||
| VGS | Gate-Source Voltage | ±30 | V | |||
| ID | Continuous Drain Current | 7.0 | A | |||
| IDM | Pulsed Drain Current | 28 | A | |||
| EAS | Single Pulsed Avalanche Energy | 247 | mJ | |||
| PD | Power Dissipation | 32.9 | W | |||
| Tj | Junction Temperature | -55 | 150 | |||
| Tstg | Storage Temperature | -55 | 150 | |||
| Electrical Characteristics | V(BR)DSS | Drain-Source Breakdown Voltage (VGS=0V, ID=250µA) | 500 | V | ||
| VSD | Drain-Source Diode Forward Voltage (VGS=0V, IS=7.0A) | 1.5 | V | |||
| IDSS | Zero Gate Voltage Drain Current (VDS=500V, VGS=0V) | 1 | µA | |||
| IGSS | Gate-Body Leakage Current (VDS=0V, VGS=±30V) | ±100 | nA | |||
| VGS(th) | Gate-Threshold Voltage (VDS=VGS, ID=250µA) | 2.0 | 4.0 | V | ||
| RDS(on) | On-Resistance (VGS=10V, ID=1.0A) | 0.9 | Ω | |||
| Thermal Resistance | RθJA | From Junction To Ambient | 62.5 | /W | ||
| RθJC | From Junction To Case | 2.6 | /W |
Ordering Information
| Product ID | Package | Qty (pcs) |
| 7N50 | TO-252 | 2500 |
2409302301_JUXING-7N50_C22440673.pdf
Related Products
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating
Product OverviewThe DTC123YUA is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, making it ideal for inverter circuits. The epoxy meets UL-94 V-0 flammability rating and ...
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
