high power transistor JUXING D13007MF designed for electronic ballasts and general power circuits
Key Attributes
Model Number:
D13007MF
Product Custom Attributes
Emitter-Base Voltage(Vebo):
11V
Current - Collector Cutoff:
100uA
Pd - Power Dissipation:
80W
Transition Frequency(fT):
4MHz
Type:
NPN
Number:
-
Current - Collector(Ic):
8A
Collector - Emitter Voltage VCEO:
400V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
D13007MF
Package:
ITO-220AB
Product Description
Product Overview
The D13007MF is a high power NPN bipolar transistor designed for electronic ballasts and general power amplifier circuits. It features high frequency power conversion, high switching speed, high reliability, high current capacity, and high withstand voltage, utilizing advanced planar process technology and triple diffusion technology for an optimal balance between current capacity and endurance.
Product Attributes
- Brand: trr-jx.com
- Model: D13007MF
- Version: 02
Technical Specifications
| Symbol | Item | Test Conditions | Minimum and maximum values | Unit |
| VCBO | Collector-Base DC Voltage | 700 | V | |
| VCEO | Collector-Emitter DC Voltage | 400 | V | |
| VEBO | Emitter-Base DC Voltage | 8 | V | |
| Ic | Maximum Collector DC Current | 11 | A | |
| Pc | Maximum Collector Power Dissipation | 150 | W | |
| Tj | Maximum Junction Temperature | 150 | C | |
| Ts | Storage Temperature | -55~+150 | C | |
| VCE(sat)(1) | Collector emitter saturation voltage drop | IC=2A, IB=0.4A | 1.2 | V |
| VCE(sat)(2) | Collector emitter saturation voltage drop | IC=8A, IB=2A | 1.56 | V |
| VBE(sat) | Base emitter saturation voltage drop | IC=8A, IB=2A | 2.5 | V |
| hFE(1) | DC Current Gain | IC=2A, IB=0.5A | 50 | |
| hFE(2) | DC Current Gain | IC=5A, IB=2A | 70 | |
| tf | Fall time | IC=5A, VCC=24V | 0.7 | S |
| tr | Rise time | S | ||
| ts | Storage time | IB1=-IB2=11A | 1.2 | S |
| VCEO(SUS) | Collector-Emitter Holding Voltage | Ic=10mA,IB=0 | 400 | V |
| V(BR)CBO | Collector-Base Breakdown Voltage | Ic=1mA,IB=0 | 700 | V |
| V(BR)EBO | Emitter-Base Breakdown Voltage | IE=1mA,Ic=0 | 7 | V |
| ICBO | Collector-Base Reverse Leakage Current | VCB=700V, IE=0 | 0.5 | mA |
| ICEO | Collector-Emitter Reverse Leakage Current | VCE=430V,IB=0 | 0.1 | mA |
| IEBO | Emitter-Base Reverse Leakage Current | VEB=7V, IC=0 | 1 | mA |
| f | Characteristic frequency | VCE=5V, IC=5A | 5 | MHz |
| Rth(jc) | Project junction to case thermal resistance | 1.2 | V /W |
2504101957_JUXING-D13007MF_C20417145.pdf
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