Low IRRM and low VF characteristics in JUXING RABS20M ultrasoft recovery bridge for power electronics

Key Attributes
Model Number: RABS20M
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
60A
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - Forward(Vf@If):
1V
Current - Rectified:
2A
Voltage - DC Reverse(Vr):
1kV
Mfr. Part #:
RABS20M
Package:
ABS
Product Description

Product Overview

The RABS20M Ultrasoft Recovery Bridge is designed for efficient power rectification with features like ultrasoft recovery, low IRRM, low VF, and high VRRM. Its special frame design aids in heat dissipation, leading to reduced EMI, lower power loss, and less stress on switching transistors. This product is suitable for applications requiring reduced snubbing.

Product Attributes

  • Package: ABS

Technical Specifications

ParameterSymbolValueUnitConditions
Maximum Repetitive Peak Reverse VoltageVRRM1000V
Maximum RMS voltageVRMS700V
Average Rectified Output CurrentIO2.0A@TA=25 C
1.0A@TA=125 C
Peak Forward Surge Current 8.3 ms Single Half Sine WaveIFSM350ASuperimposed on Rated Load (JEDEC Method)
Maximum Forward Voltage at 1.0 AVF1.0V@TA=25 C
Maximum DC Reverse Current at Rated DC Blocking VoltageIR100µA@TA=125 C
Typical Junction CapacitanceCj350pFMeasured at 1MHz and applied reverse voltage of 4 V D.C.
Operating and Storage Temperature RangeTj, Tstg-55 ~ +150°C
Reverse Recovery TimeTrr350nsIF=0.5A,IR=1A,IRR=0.25A
I 2 t rating for fusingI 2 t24.5A²S(1ms< t < 10ms)

2206101730_JUXING-RABS20M_C3033276.pdf

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