30 Volt 80 Amp N Channel MOSFET JUXING JX3080K Suitable for Electronic Switching Applications

Key Attributes
Model Number: JX3080K
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
3.8mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)):
1.7V
Reverse Transfer Capacitance (Crss@Vds):
216pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
1.615nF@15V
Pd - Power Dissipation:
46W
Gate Charge(Qg):
-
Mfr. Part #:
JX3080K
Package:
TO-252
Product Description

Product Overview

The JX3080K is an N-Channel Enhancement Mode MOSFET designed for efficient load switching applications. It features 30V MOSFET technology, low on-state resistance, and fast switching capabilities, making it suitable for various electronic designs. The device offers a Vgs range of 20V.

Product Attributes

  • Brand: JX
  • Origin: Not Specified
  • Material: Not Specified
  • Color: Not Specified
  • Certifications: Not Specified

Technical Specifications

Part NumberVDS (V)RDS(on) Typ. (m)ID Max. (A)VGS (V)Package
JX3080K303.88010TO-252
ParameterSymbolTest ConditionsMin.Typ.Max.Units
Drain to Source Breakdown VoltageV(BR)DSSID = 250A, VGS = 0V3033.5V
Zero-Gate Voltage Drain CurrentIDSSVDS = 30V, VGS = 0V1A
Gate to Source Leakage CurrentIGSS1VGS = 20V, VSS = 0V100nA
Gate Threshold VoltageVGS(th)VDS=VGS, IDS=250A1.21.72.2V
Static Drain to Source On-State ResistanceRDS(on)ID = 30A, VGS = 10V3.84.6m
Static Drain to Source On-State ResistanceRDS(on)ID = 20A, VGS = 4.5V6.39m
Input CapacitanceCissVGS=0V, VDS=15V, Frequency=1.0MHz1615pF
Output CapacitanceCossVGS=0V, VDS=15V, Frequency=1.0MHz245pF
Reverse Transfer CapacitanceCrssVGS=0V, VDS=15V, Frequency=1.0MHz216pF
Turn-ON Delay Timetd(on)VDS= 15V, ID = 30A, VGS = 10V, RG = 37.5ns
Rise TimetrVDS= 15V, ID = 30A, VGS = 10V, RG = 314.5ns
Turn-OFF Delay Timetd(off)VDS= 15V, ID = 30A, VGS = 10V, RG = 335ns
Fall TimetfVDS= 15V, ID = 30A, VGS = 10V, RG = 39.6ns
Total Gate ChargeQgVDS = 15V, VGS = 10V, ID = 30A33.8nC
Gate to Source ChargeQgsVDS = 15V, VGS = 10V, ID = 30A8.5nC
Gate to Drain ChargeQgdVDS = 15V, VGS = 10V, ID = 30A7.5nC
Diode Forward VoltageVFSDIS = 30A, VGS = 00.31.2V
ParameterSymbolMaximumUnits
Drain to Source VoltageVDSS30V
Gate to Source VoltageVGSS20V
Drain Current (DC)ID80A
Drain Current (Pulse)IDP280A
Total DissipationPD46W
Avalanche Energy, Single PulsedEAS169mJ
Junction TemperatureTj150
Storage TemperatureTstg-55 to +150
ParameterSymbolValueUnit
Junction to case Thermal ResistanceRJC2.72/W

2410121501_JUXING-JX3080K_C19193789.pdf

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