Power MOSFET KIA Semicon Tech KND3303C 30 Volt 90 Amp N Channel for Load Switching and Power Control
Key Attributes
Model Number:
KND3303C
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
90A
RDS(on):
4mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
320pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
70W
Input Capacitance(Ciss):
3.28nF@15V
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
KND3303C
Package:
TO-252
Product Description
Product Overview
The 90A, 30V N-CHANNEL MOSFET (Model 3303C) from KIA SEMICONDUCTORS offers very low on-resistance (RDS(ON)), low Crss, and fast switching capabilities. It is 100% avalanche tested and features improved dv/dt capability, making it suitable for PWM applications, load switching, and power management.
Product Attributes
- Brand: KIA
- Origin: KIA SEMICONDUCTORS
Technical Specifications
| Part Number | Package | Brand | Drain-source voltage (VDSS) | Continuous drain current (ID @ TC=25C) | Continuous drain current (ID @ TC=100C) | Gate-source voltage (VGS) | Drain-source on-resistance (RDS(on) @ VGS=10V, ID=20A) DFN3*3/5*6 | Drain-source on-resistance (RDS(on) @ VGS=10V) TO-252 | Power dissipation (PD @ TC=25C) DFN3*3/5*6 | Power dissipation (PD @ TC=25C) TO-252 | Thermal resistance junction-case (RJC) DFN3*3/5*6 | Thermal resistance junction-case (RJC) TO-252 |
| KNG3303C | DFN3*3 | KIA | 30 V | 90 A | 59 A | 20 V | 2.6 m (typ.) | 3.2 m (typ.) | 66 W | 70 W | 1.9 C/W | 1.78 C/W |
| KNY3303C | DFN5*6 | KIA | 30 V | 90 A | 59 A | 20 V | 2.6 m (typ.) | 3.2 m (typ.) | 66 W | 70 W | 1.9 C/W | 1.78 C/W |
| KND3303C | TO-252 | KIA | 30 V | 90 A | 59 A | 20 V | 2.6 m (typ.) | 3.2 m (typ.) | 66 W | 70 W | 1.9 C/W | 1.78 C/W |
2411121110_KIA-Semicon-Tech-KND3303C_C41369537.pdf
Related Products
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
