Power MOSFET KIA Semicon Tech KCY3303S N Channel 30V 95A for Desktop and Converter Power Solutions
Key Attributes
Model Number:
KCY3303S
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
95A
Operating Temperature -:
-
RDS(on):
3.8mΩ@4.5V,20A
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
205pF
Number:
1 N-channel
Output Capacitance(Coss):
1.58nF
Input Capacitance(Ciss):
3.03nF
Pd - Power Dissipation:
48W
Gate Charge(Qg):
20nC@10V
Mfr. Part #:
KCY3303S
Package:
DFN-8(5x6)
Product Description
Product Overview
The KCX3303S is a 95A, 30V N-Channel MOSFET from KIA SEMICONDUCTORS, featuring advanced trench technology for low gate charge and high current capability. It is RoHS and Halogen-Free compliant, making it suitable for power management in desktop computers and DC/DC converters.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Product Name: KCX3303S
- Certifications: RoHS and Halogen-Free Compliant
Technical Specifications
| Parameter | Symbol | Rating | Units | Test Conditions |
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=-250A |
| Drain-Source Leakage Current | IDSS | - | A | VDS=24V,VGS=0V, TJ=25C |
| Gate-Source Leakage Current | IGSS | - | nA | VGS=+20V,VDS=0V |
| Gate Threshold Voltage | VGS(th) | 1.2 - 2.5 | V | VDS=VGS, ID=250A |
| Static Drain-Source On-Resistance | RDS(on) | 2.2 - 2.8 | m | VGS=10V,ID=20A |
| Forward Transconductance | gFS | - 90 - | S | VDS=5V, ID=20A |
| Gate Resistance | Rg | - 1.6 - | VGS=0V, VDS=0V F=1MHZ | |
| Total Gate Charge | Qg | - 20 - | nC | VDS=15V, VGS=10V ID =20A |
| Gate-Source Charge | Qgs | - 12 - | nC | |
| Gate-Drain Charge | Qg d | - 14.5 - | nC | |
| Turn-on Delay Time | td(on) | - 11 - | ns | VDD=15V, RG=3.3, VGS=10V ID=-20A |
| Rise Time | tr | - 6 - | ns | |
| Turn-off Delay Time | td(off) | - 38 - | ns | |
| Fall Time | tf | - 11 - | ns | |
| Input Capacitance | Ciss | - 3030 - | pF | VGS=0V, VDS=15V F=1.0MHZ |
| Output Capacitance | Coss | - 1580 - | pF | |
| Reverse Transfer Capacitance | Crss | - 205 - | pF | |
| Continuous Source Current | IS | - - 95 | A | VG=VD=0V,Force current |
| Diode Forward Voltage | VSD | - - 1.4 | V | VGS=0V,IS=1A, TJ=25C |
| Parameter | Symbol | Ratings | Units | Notes |
| Drain-Source Voltage | VDS | 30 | V | |
| Gate-Source Voltage | VGS | +20 | V | |
| Continuous Drain Current | ID | 95 (TC=25C), 76 (TC=100C) | A | VGS@10V |
| Pulsed Drain Current | IDM | 280 | A | |
| Single Pulse Avalanche Energy | EAS | 151 | mJ | |
| Avalanche Current | IAS | 55 | A | |
| Total Power Dissipation | PD | 48 (Tc=25C) | W | |
| Junction and Storage Temperature Range | TJ ,TSTG | -55 to150 | C |
| Parameter | Symbol | Ratings | Units | Notes |
| Thermal Resistance, Junction-Ambient | RJA | 50 | C/W | 1 |
| Thermal Resistance, Junction-Case | RJC | 2.6 | C/W | 1 |
2409302232_KIA-Semicon-Tech-KCY3303S_C1509089.pdf
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