Signal amplification and switching transistor KUU S8550 PNP type with continuous collector current 05A
Key Attributes
Model Number:
S8550
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
-
Type:
PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-
Mfr. Part #:
S8550
Package:
SOT-23
Product Description
Product Overview
The S8550 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It is complementary to the S8050 transistor and offers a continuous collector current of up to 0.5A. This transistor is suitable for various electronic circuits requiring signal amplification or control.
Product Attributes
- Marking: 2TY
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| Collector-Base Voltage | VCBO | -40 | V | |||
| Collector-Emitter Voltage | VCEO | -25 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Collector Current - Continuous | IC | -0.5 | A | |||
| Collector Power Dissipation | PC | TA=25 | 0.3 | W | ||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | 150 | |||
| Collector-base breakdown voltage | V(BR)CBO | IC= -100A, IE=0 | -40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC= -1mA, IB=0 | -25 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-100A, IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB=-30 V , IE=0 | -1 | A | ||
| Collector cut-off current | ICEO | VCE=-25V , IB=0 | -10 | A | ||
| Emitter cut-off current | IEBO | VEB=-5V , IC=0 | -1 | A | ||
| DC current gain | hFE | VCE=-1V, IC= -50mA | 80 | 400 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=-500mA, IB= -50mA | -0.5 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=-500mA, IB= -50mA | -1.2 | V | ||
| hFE Classification | 80-100 | |||||
| hFE Classification | 100-200 | |||||
| hFE Classification | 200-400 | |||||
| hFE Classification | 400-600 |
2410121252_KUU-S8550_C7603176.pdf
Related Products
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
Versatile NPN transistor YTL BCW60D in SOT23 package suitable for multiple electronic applications
Product OverviewThe BCW60D is a general-purpose NPN bipolar transistor in a SOT-23 package, designed for various electronic applications. It offers reliable performance with key electrical characteristics such as breakdown voltages, current gain, and saturation voltages.Product AttributesTransistor ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
