KEC SMAB13-RTK P Schottky Barrier Diode for switching power supply and office equipment applications

Key Attributes
Model Number: SMAB13-RTK/P
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
40A
Reverse Leakage Current (Ir):
1mA@30V
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
30V
Voltage - Forward(Vf@If):
420mV@1A
Current - Rectified:
1A
Mfr. Part #:
SMAB13-RTK/P
Package:
SMA(DO-214AC)
Product Description

Product Overview

The SMAB13 is a Schottky Barrier Type Diode designed for switching power supply applications. It features a low profile surface mount package, enabling low power loss and high efficiency. This diode is ideal for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Common applications include switching power supplies, DC/DC converters, home appliances, office equipment, and telecommunication devices.

Product Attributes

  • Type: Schottky Barrier Type Diode
  • Application: Switching Type

Technical Specifications

Characteristic Symbol Rating Unit
Maximum Repetitive Peak Reverse Voltage VRRM 30 V
Average Output Rectified Current IO 1 A
Peak One Cycle Surge Forward Current (Non-Repetitive 60Hz) IFSM 40 A
Junction Temperature Tj -55~150
Storage Temperature Range Tstg -55~150
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Peak Forward Voltage VFM IFM=1.0A - - 0.42 V
Repetitive Peak Reverse Current IRRM VRRM=Rated - - 1.0 mA
Thermal Resistance (Junction to lead) Rth(j-1) - - - 23 /W
Thermal Resistance (Junction to ambient on alumina substrate) Rth(j-a) - - - 108 /W
DIM A B C D E F G
MILLIMETERS 5.0 0.2 2.5 0.15 1.45 0.18 4.3 0.3 2.1 0.2 0.23 0.08 1.15 0.35
Package Anode Cathode
SMA 1 2

2410121940_KEC-SMAB13-RTK-P_C147279.pdf

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