N channel power MOSFET KIA Semicon Tech KNY3403B suitable for UPS and inverter system power control

Key Attributes
Model Number: KNY3403B
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
85A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
205pF
Number:
1 N-channel
Output Capacitance(Coss):
270pF
Input Capacitance(Ciss):
2.2nF
Pd - Power Dissipation:
71W
Gate Charge(Qg):
47nC@10V
Mfr. Part #:
KNY3403B
Package:
DFN-8(5x6)
Product Description

Product Overview

The KNX3403B is an N-channel enhancement mode power MOSFET manufactured using KIA's LVMOSFET technology. This device is engineered with an improved process and cell structure to achieve minimal on-state resistance and superior switching performance. It is widely utilized in UPS and Power Management for Inverter Systems.

Product Attributes

  • Brand: KIA
  • Origin: KIA SEMICONDUCTORS
  • Model: KNX3403B

Technical Specifications

Part NumberPackageBrandVDSS (V)ID (A) @ TC=25CRDS(on) typ. (m) @ VGS=10VEAS (mJ)PD (W) @ TC=25CTJ,TSTG (C)RJC (C/W)RJA (C/W)BVDSS (V)IDSS (uA)IGSS (nA)VGS(th) (V)RG ()Ciss (pF)Coss (pF)Crss (pF)td(on) (ns)tr (ns)td(off) (ns)tf (ns)Qg (nC)Qgs (nC)Qgd (nC)IS (A)VSD (V) @ IS=20Atrr (ns)Qrr (uC)
KND3403BTO-252KIA30854.515671-55 to +1502.1623011000.8 - 2.55.02200270205118714082478.59.9851.4157.0
KNY3403BDFN5*6KIA30854.515671-55 to +1502.1623011000.8 - 2.55.02200270205118714082478.59.9851.4157.0

2410122002_KIA-Semicon-Tech-KNY3403B_C2839428.pdf

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