N Channel MOSFET KIA Semicon Tech KND3308A 80A 80V Suitable for Power Supply and DC DC Converter
Key Attributes
Model Number:
KND3308A
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-
RDS(on):
6.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
270pF
Number:
1 N-channel
Input Capacitance(Ciss):
3.11nF
Output Capacitance(Coss):
445pF
Pd - Power Dissipation:
288W
Gate Charge(Qg):
76nC@10V
Mfr. Part #:
KND3308A
Package:
TO-252
Product Description
Product Overview
The KIA SEMICONDUCTORS 3308A is an 80A, 80V N-CHANNEL MOSFET designed for high-efficiency power applications. It features low Rds(on) of 6.2m@VGS=10V to minimize conductive loss and high avalanche current capability. This device is suitable for power supplies and DC-DC converters.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Product Name: 3308A
- Channel Type: N-CHANNEL
- Certifications: Lead free and green device available
Technical Specifications
| Parameter | Symbol | Conditions | TO-252 | TO-263 | TO-247 | Units |
| Absolute Maximum Ratings | VDSS | 80 | V | |||
| VGSS | +25 | V | ||||
| ID (TC=25 C) | ID3 | 80* | 80 | 80 | A | |
| ID (TC=100 C) | ID3 | 70* | 70 | 70 | A | |
| IDP (TC=25 C) | IDP4 | 340 | A | |||
| Avalanche Ratings | IAS | IAS5 | 20 | A | ||
| EAS | EAS5 | 410 | mJ | |||
| Power Dissipation | PD (TC=25 C) | 120 | 240 | 288 | W | |
| PD (TC=100 C) | 60 | 100 | 144 | W | ||
| Temperature Range | TJ,TSTG | -55175 | C | |||
| Thermal Characteristics | Rjc | Typical | 1.04 | 0.52 | 0.44 | C/W |
| Rja | Typical | 55 | C/W | |||
| Rjc | Typical | 0.52 | C/W | |||
| Static Characteristics | BVDSS | VGS=0V,IDS=250A | 80 | V | ||
| IDSS | VDS=64V,VGS=0V | - | - | 1 | A | |
| IDSS (TJ=125 C) | - | - | 100 | A | ||
| VGS(th) | VDS=VGS, IDS=250A | 2 | 3 | 4 | V | |
| IGSS | VGS=+25V,VDS=0V | - | - | +100 | nA | |
| RDS(on)1 | VGS=10V,IDS=30A | - | 6.2 | 9 | m | |
| RDS(on)1 | VGS=10V,IDS=30A | - | - | 6.2 | m | |
| Diode Characteristics | VSD1 | ISD=40A,VGS=0V | - | - | 1.3 | V |
| IS3 | - | - | 80 | A | ||
| trr | IF=40A,dl/dt=100A/s | - | 25 | - | nS | |
| Qrr | - | 18.5 | - | nC | ||
| Dynamic Characteristics | RG | VGS=0V, VDS=0V,F=1MHz | - | 1.3 | - | |
| Ciss | VGS=0V, VDS=25V, F=1.0MHz | - | 3110 | - | pF | |
| Coss | - | 445 | - | pF | ||
| Crss | - | 270 | - | pF | ||
| td(ON) | VDD=37.5V,ID=40A, VGS=10V,RG=6.8 | - | 20.4 | - | nS | |
| tr | - | 63 | - | |||
| td(OFF) | 67 | - | ||||
| tf | 43 | - | ||||
| Gate Charge Characteristics | Qg | VDS=37.5V, VGS=10V, ID=40A | - | 76 | - | nC |
| Qgs | - | 9.5 | - | nC | ||
| Qgd | - | 40 | - | nC |
2410010000_KIA-Semicon-Tech-KND3308A_C188764.pdf
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