85V N channel MOSFET KIA Semicon Tech KCD3008A designed for power switching in motor drives and DC DC converters
Key Attributes
Model Number:
KCD3008A
Product Custom Attributes
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+175℃
RDS(on):
5.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
35pF
Number:
1 N-channel
Output Capacitance(Coss):
545pF
Input Capacitance(Ciss):
4.03nF
Pd - Power Dissipation:
-
Gate Charge(Qg):
65nC@10V
Mfr. Part #:
KCD3008A
Package:
TO-252
Product Description
85V 4.5mR N-CHANNEL MOSFET KCX3008A
The KCX3008A is an N-channel MOSFET from KIA SEMICONDUCTORS, featuring advanced SGT technology for extremely low on-resistance (RDS(on)) and an excellent figure of merit (FOM). It is designed for applications such as motor drives, synchronous rectification (SR), DC/DC converters, and general-purpose use.
Product Attributes
- Brand: KIA
- Origin: KIA SEMICONDUCTORS
Technical Specifications
| Part Number | Package | Brand | Drain-to-Source Voltage (VDSS) | Continuous Drain Current (ID) @ TC=25C (Silicon limited) | Continuous Drain Current (ID) @ TC=25C (Package limited) | Pulsed drain current (IDP) | Avalanche energy (EAS) | Gate-Source voltage (VGS) | Power dissipation (Ptot) @ TC=25C | Junction & Storage Temperature Range (TJ& TSTG) | Thermal resistance, junction-ambient (RJA) | Thermal resistance, Junction-case (RJC) | Drain-source breakdown voltage (BVDSS) | Zero Gate Voltage Drain Current (IDSS) | Gate threshold voltage (VGS(th)) | Gate leakage current (IGSS) | Drain-source on-resistance (RDS(on)) | Transconductance (gfs) | Input capacitance (Ciss) | Output capacitance (Coss) | Reverse transfer capacitance (Crss) | Total gate charge (Qg) | Gate-source charge (Qgs) | Gate-drain charge (Qgd) | Diode forward voltage (VSD) | Reverse recovery time (trr) | Reverse recovery charge (Qrr) |
| KCB3008A | TO-263 | KIA | 85 V | 160 A | 120 A | 480 A | 560 mJ | 20 V | 220 W | -55 to 175 C | 60 C/W | 0.68 C/W | 85 - 90 V | - 1 A | 2.0 - 4.0 V | - 100 nA | - 4.5 - 5.5 m | - 80 S | - 4030 pF | - 545 pF | - 35 pF | - 65 nC | - 25 nC | - 14 nC | - 0.85 - 1.4 V | - 60 ns | - 340 nC |
| KCY3008A | DFN5*6 | KIA | 85 V | 100 A | 90 A | 480 A | 560 mJ | 20 V | 90 W | -55 to 175 C | 60 C/W | 1.66 C/W | 85 - 90 V | - 1 A | 2.0 - 4.0 V | - 100 nA | - 4.5 - 5.5 m | - 80 S | - 4030 pF | - 545 pF | - 35 pF | - 65 nC | - 25 nC | - 14 nC | - 0.85 - 1.4 V | - 60 ns | - 340 nC |
| KCD3008A | TO-252 | KIA | 85 V | 100 A | 80 A | 480 A | 560 mJ | 20 V | 85 W | -55 to 175 C | 60 C/W | 1.76 C/W | 85 - 90 V | - 1 A | 2.0 - 4.0 V | - 100 nA | - 4.5 - 5.5 m | - 80 S | - 4030 pF | - 545 pF | - 35 pF | - 65 nC | - 25 nC | - 14 nC | - 0.85 - 1.4 V | - 60 ns | - 340 nC |
2409302301_KIA-Semicon-Tech-KCD3008A_C2839422.pdf
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