Silicon Schottky Barrier Diode KUU BAT54W Fast Switching Low Forward Voltage for Electronic Applications
Key Attributes
Model Number:
BAT54W
Product Custom Attributes
Reverse Leakage Current (Ir):
2uA@25V
Diode Configuration:
1 Independent
Voltage - DC Reverse (Vr) (Max):
30V
Voltage - Forward(Vf@If):
1V@100mA
Current - Rectified:
200mA
Mfr. Part #:
BAT54W
Package:
SOT-323
Product Description
Product Overview
This datasheet describes the BAT54W/AW/CW/SW series Silicon Schottky Barrier Diodes, designed for extremely fast switching speeds. These diodes are suitable for various electronic applications requiring efficient rectification and low forward voltage drop.
Product Attributes
- Brand: Yongyutai
- Material: Silicon
- Package: Plastic surface mounted package; 3 leads SOT-323
Technical Specifications
| Part Number | Marking | Peak Repetitive Reverse Voltage (VRRM) | Working Peak Reverse Voltage (VRWM) | Forward Continuous Current (IFM) | Power Dissipation (PD) | Reverse Breakdown Voltage (V(BR)R) | Forward Voltage (VF) | Reverse Current (IR) | Diode Capacitance (CD) | Reverse Recovery Time (trr) |
| BAT54W | L4 | 30 V | 30 V | 200 mA | 200 mW | 30 V | 0.24 V (IF=0.1mA) 0.32 V (IF=1mA) 0.40 V (IF=10mA) 0.50 V (IF=30mA) 1 V (IF=100mA) | 2 A (VR=25V) | 10 pF (VR=1V,f=1MHz) | 5 nS (IF=IR=10mA, Irr=0.1XIR,RL=100) |
| BAT54AW | L42 | 30 V | 30 V | 200 mA | 200 mW | 30 V | 0.24 V (IF=0.1mA) 0.32 V (IF=1mA) 0.40 V (IF=10mA) 0.50 V (IF=30mA) 1 V (IF=100mA) | 2 A (VR=25V) | 10 pF (VR=1V,f=1MHz) | 5 nS (IF=IR=10mA, Irr=0.1XIR,RL=100) |
| BAT54CW | L43 | 30 V | 30 V | 200 mA | 200 mW | 30 V | 0.24 V (IF=0.1mA) 0.32 V (IF=1mA) 0.40 V (IF=10mA) 0.50 V (IF=30mA) 1 V (IF=100mA) | 2 A (VR=25V) | 10 pF (VR=1V,f=1MHz) | 5 nS (IF=IR=10mA, Irr=0.1XIR,RL=100) |
| BAT54SW | L44 | 30 V | 30 V | 200 mA | 200 mW | 30 V | 0.24 V (IF=0.1mA) 0.32 V (IF=1mA) 0.40 V (IF=10mA) 0.50 V (IF=30mA) 1 V (IF=100mA) | 2 A (VR=25V) | 10 pF (VR=1V,f=1MHz) | 5 nS (IF=IR=10mA, Irr=0.1XIR,RL=100) |
2506231755_KUU-BAT54W_C49241656.pdf
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