Schottky Barrier Diode KUU 1N5819WT with 40 Volt DC Blocking Voltage and 350 Milliamp Forward Current
Key Attributes
Model Number:
1N5819WT
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
5uA@30V
Voltage - DC Reverse (Vr) (Max):
40V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
600mV@200mA
Current - Rectified:
350mA
Mfr. Part #:
1N5819WT
Package:
SOD-523
Product Description
Product Overview
The 1N5819WT S4 is a plastic-encapsulated Schottky Barrier Diode featuring a low forward voltage drop and a SOD523 micro SMD package. It is RoHS Compliant and Green EMC, with a matte tin lead finish. The device is ideally suited for automatic insertion in surface mount applications.
Product Attributes
- Brand: 1N5819WT S4
- Package Type: SOD523 Micro SMD
- Certifications: RoHS Compliant / Green EMC
- Lead Finish: Matte Tin (Sn)
- Marking: Cathode Band / Device Marking
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Units |
| Voltage | Peak Repetitive Reverse Voltage (VRRM) | 40 | V | |||
| Working Peak Reverse Voltage (VRWM) | 40 | V | ||||
| DC Blocking Voltage (VR) | 40 | V | ||||
| RMS Reverse Voltage (VR(RMS)) | 28 | V | ||||
| Current | Forward Continuous Current (IFM) | 350 | mA | |||
| Non-Repetitive Peak Forward Surge Current (IFSM) | @t=8..3ms | 2.0 | A | |||
| Power | Power Dissipation (PD) | 200 | mW | |||
| Temperature | Junction Temperature (TJ) | 125 | ||||
| Storage Temperature (TSTG) | -55 | +150 | ||||
| Thermal Resistance | From Junction To Ambient (RJA) | 625 | /W | |||
| Electrical Characteristics | Reverse Voltage (VBR) | IF = 100uA | 40 | V | ||
| Forward Voltage (VF) | IF = 20mA | 0.37 | V | |||
| Forward Voltage (VF) | IF = 200mA | 0.60 | V | |||
| Reverse Current (IR) | VR= 30V | 5 | A | |||
| Capacitance (CT) | VR = 0V, f = 1MHz | 50 | pF | |||
| Reverse Recovery Time (trr) | IF = IR =200mA, Irr=0.1*IRRL = 100 | 10 | ns |
2410121615_KUU-1N5819WT_C20199347.pdf
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