Silicon Carbide Diode KNSCHA KN3D06065G Offering High Surge Current and Zero Recovery Current Features
Key Attributes
Model Number:
KN3D06065G
Product Custom Attributes
Reverse Leakage Current (Ir):
5uA
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
650V
Voltage - Forward(Vf@If):
1.5V
Current - Rectified:
6A
Mfr. Part #:
KN3D06065G
Package:
DFN-5(8x8)
Product Description
Product Overview
This Silicon Carbide Schottky Diode family offers state-of-the-art performance for high-frequency applications requiring high efficiency and reliability. Key features include zero forward/reverse recovery current, high blocking voltage, temperature-independent switching behavior, and high surge current capability. These diodes are ideal for PC power, server power supplies, AC/DC and DC/DC converters, and uninterruptible power supplies, providing higher system efficiency, convenience for parallel device use without thermal runaway, and enhanced reliability.
Product Attributes
- Brand: KNSCHA
- Material: Silicon Carbide (SiC)
- Package Type: DFN 8x8
Technical Specifications
| Part Number | VRRM (V) | IF (A) | QC (nC) | VRRM (V) | VR (V) | IFSM (A) | IFRM (A) | PD (W) | Tj (C) | Tstg (C) | RthJC (C/W) | VDC (V) | VF (V) | IR (A) | QC (nC) | C (pF) | Package | Packing | M.O.Q |
| KN3D06065G | 650 | 6 | 15 | 650 | 650 | 35 (TC=25C, tp=10ms) / 25 (TC=150C, tp=10ms) / 200 (TC=25C, tp=10s) | 25 (TC=25C, tp=10ms) / 20 (TC=150C, tp=10ms) | 63 (TC=25C) | -55 to 175 | -55 to 175 | 2.0 (Typ.) | 650 | 1.50 (IF=6A, Tj=25C) / 1.65 (IF=6A, Tj=125C) / 1.80 (IF=6A, Tj=175C) | 5 (VR=650V, Tj=25C) / 60 (VR=650V, Tj=125C) / 80 (VR=650V, Tj=175C) | 15 | 240 (VR=1V, Tj=25C) / 30 (VR=200V, Tj=25C) / 21 (VR=400V, Tj=25C) | DFN8X8 | 3000pcs/Tape&Reel | 3000 |
2410122022_KNSCHA-KN3D06065G_C5373184.pdf
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