Silicon epitaxial planar diode KUU LL4148 MiniMELF case optimized for fast switching electronic circuits
Key Attributes
Model Number:
LL4148
Product Custom Attributes
Reverse Leakage Current (Ir):
5uA
Reverse Recovery Time (trr):
4ns
Voltage - DC Reverse (Vr) (Max):
75V
Pd - Power Dissipation:
500mW
Voltage - Forward(Vf@If):
1V@10mA
Current - Rectified:
200mA
Mfr. Part #:
LL4148
Package:
LL-34
Product Description
Product Overview
The LL4148 is a fast switching silicon epitaxial planar diode housed in a MiniMELF case, specifically designed for automatic surface mounting. Its fast switching characteristics make it suitable for various electronic applications requiring efficient signal processing.
Product Attributes
- Brand: yongyutai
- Case: MiniMELF (LL-34)
- Material: Silicon Epitaxial Planar
Technical Specifications
| Parameter | Symbol | Value | Unit | Min. | Max. |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Peak Reverse Voltage | VRM | 100 | V | ||
| Reverse Voltage | VR | 75 | V | ||
| Average Rectified Forward Current | IF(AV) | 200 | mA | ||
| Non-repetitive Peak Forward Surge Current (t = 1 s) | IFSM | 0.5 | A | ||
| Non-repetitive Peak Forward Surge Current (t = 1 ms) | 1 | ||||
| Non-repetitive Peak Forward Surge Current (t = 1 s) | 4 | ||||
| Power Dissipation (Valid provided electrodes are kept at ambient temperature) | Ptot | 500 | mW | ||
| Junction Temperature | Tj | OC | 175 | ||
| Storage Temperature Range | TS | OC | -65 | +175 | |
| Characteristics (at Tj = 25 OC) | |||||
| Forward Voltage at IF = 10 mA | VF | V | 1 | ||
| Leakage Current at VR = 20 V | IR | nA / A | 25 (nA) | ||
| Leakage Current at VR = 75 V | 5 (A) | ||||
| Leakage Current at VR = 20 V, Tj = 150 OC | 50 (A) | ||||
| Reverse Breakdown Voltage (tested with 100 A Pulses) | V(BR)R | 100 | V | ||
| Capacitance at VR = 0 | Ctot | pF | 4 | ||
| Voltage Rise when Switching ON (tested with 50 mA Forward Pulses, tp = 0.1 s, Rise Time < 30 ns, fp = 5 to 100 KHz) | Vfr | V | 2.5 | ||
| Reverse Recovery Time (from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 ) | trr | ns | 4 | ||
| Thermal Resistance Junction to Ambient Air (Valid provided electrodes are kept at ambient temperature) | RthA | K/mW | 0.35 | ||
| Rectification Efficiency (at f = 100 MHz, VRF = 2 V) | V | 0.45 | |||
2506301759_KUU-LL4148_C49284670.pdf
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