switching N Channel MOSFET KUU K2N7002T 7 F featuring low gate threshold voltage and RoHS compliance

Key Attributes
Model Number: K2N7002T-7-F
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
115mA
RDS(on):
7.5Ω@10V
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 N-channel
Output Capacitance(Coss):
25pF
Input Capacitance(Ciss):
50pF
Pd - Power Dissipation:
150mW
Mfr. Part #:
K2N7002T-7-F
Package:
SOT-523
Product Description

Product Overview

This N-Channel MOSFET in a SOT-523 surface mount plastic package offers low on-resistance, low gate threshold voltage, and low input capacitance. It is designed for various applications requiring efficient switching and low power consumption. The device features a Matte Tin(Sn) lead finish and is RoHS Compliant and Green EMC.

Product Attributes

  • Device Marking Code: K72
  • Part Number: K2N7002T-7-F
  • Package: SOT-523
  • Lead Finish: Matte Tin(Sn)
  • Certifications: RoHS Compliant, Green EMC
  • Weight: approx. 0.002g

Technical Specifications

ParameterSymbolTest ConditionValueUnits
Absolute Maximum Ratings
Drain-Source VoltageVDSTA = 25C unless otherwise noted60V
Continuous Gate-Source VoltageVGSTA = 25C unless otherwise noted20V
Continuous Drain CurrentIDTA = 25C unless otherwise noted115mA
Power DissipationPDTA = 25C unless otherwise noted150mW
Thermal Resistance from Junction to AmbientRJATA = 25C unless otherwise noted833C /W
Storage Temperature RangeTSTGTA = 25C unless otherwise noted-55 to +150C
Operating Junction TemperatureTJTA = 25C unless otherwise noted+150C
Electrical Characteristics
Drain-Source Breakdown VoltageBVDSSVGS=0V, ID=10uA60Volts
Gate-Body LeakageIGSSVDS=0V, VGS=20V1uA
Zero Gate Voltage Drain CurrentIDSSVDS=60V, VGS=0V100nA
Gate-Threshold VoltageVth(GS)VDS= VGS, ID=250uA1Volts
On-state Drain CurrentID(ON)VGS=10V, VDS=7V500mA
Drain-Source On-ResistanceRDS(on)VGS=10V, ID=500mA7.5
Drain-Source On-ResistanceRDS(on)VGS=5V, ID=50mA7.5
Forward Trans ConductancegfsVDS=10V, ID=200mA80 - 500mS
Drain-Source On-VoltageVDS(on)VGS=10V, ID=500mA3.75V
Drain-Source On-VoltageVDS(on)VGS=5V, ID=50mA0.375V
Diode Forward VoltageVSDIS=250mA, VGS=0V1V
Dynamic Characteristics
Input CapacitanceCissVDS = 25V, VGS = 0V, f = 1.0MHz50pF
Output CapacitanceCossVDS = 25V, VGS = 0V, f = 1.0MHz25pF
Reverse Transfer CapacitanceCrssVDS = 25V, VGS = 0V, f = 1.0MHz5.0pF
Switching Characteristics
Turn-on TimetD(on)VDD=10V, RL=20, ID=500mA, VGEN=10V, RG = 105.6nS
Turn-off TimetD(off)VDD=10V, RL=20, ID=500mA, VGEN=10V, RG = 1025nS

2410121605_KUU-K2N7002T-7-F_C2904827.pdf

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