Power MOSFET Leiditech BUK7M12-60E N Channel Device with 20 Amp Continuous Current and 60 Volt Drain Source Voltage
Key Attributes
Model Number:
BUK7M12-60E
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
20A
RDS(on):
10mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4.1pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
1.1821nF@50V
Pd - Power Dissipation:
60W
Gate Charge(Qg):
18.4nC@10V
Mfr. Part #:
BUK7M12-60E
Package:
DFN3x3-8L
Product Description
Product Overview
The BUK7M12-60E is an N-Channel Enhancement Mode Power MOSFET designed for various applications. It features a continuous drain current of 20 A at 25C and 11 A at 70C, with a pulsed drain current of 60 A. The MOSFET offers a drain-source breakdown voltage of 60 V and a gate threshold voltage typically around 1.5 V. Its low on-state resistance, with values as low as 7.5 m at VGS=10 V and ID=20 A, makes it suitable for efficient power handling. The device is housed in a DFN3*3-8L package, providing a compact solution for space-constrained designs. This MOSFET is ideal for applications requiring robust performance and high efficiency.
Product Attributes
- Brand: Leiditech
- Model Series: AP65N06DF (Pack Marking)
- Product Type: N-Channel Enhancement Mode Power MOSFET
- Package Type: DFN3*3-8L
- Origin: Shanghai Leiditech Electronic Co.,Ltd
- Revision: 01.0 .2021
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain source voltage | @Tj=25 (unless otherwise specified) | 60 | V | ||
| VGS | Gate source voltage | @Tj=25 (unless otherwise specified) | 20 | V | ||
| ID@TA=25 | Continuous drain current | 20 | A | |||
| ID@TA=70 | Continuous drain current | 11 | A | |||
| IDM | Pulsed drain current | 60 | A | |||
| PD@TA=25 | Power dissipation | 60 | W | |||
| EAS | Single pulsed avalanche energy | 30 | mJ | |||
| TSTG | Storage Temperature Range | -55 | to | 150 | ||
| Tj | Operation and storage temperature | -55 | to | 150 | ||
| RJC | Thermal resistance, junction-case | 2.1 | C/W | |||
| RJA | Thermal resistance, junction-ambient5) | 85 | C/W | |||
| Electrical Characteristics (TJ=25, unless otherwise noted) | ||||||
| BVDSS | Drain-source breakdown voltage | VGS=0 V, ID=250 A | 60 | 68 | V | |
| VGS(th) | Gate threshold voltage | VDS=VGS, ID=250 A | 1.2 | 1.5 | 2.5 | V |
| RDS(ON) | Drain-source on-state resistance | VGS=10 V, ID=20 A | 7.5 | 10 | m | |
| RDS(ON) | Drain-source on-state resistance | VGS=4.5 V, ID=10 A | 10 | 13 | m | |
| IGSS | Gate-source leakage current | VGS=20 V | 100 | nA | ||
| IDSS | Drain-source leakage current | VDS=60 V, VGS=0 V | 1 | A | ||
| Ciss | Input capacitance | VGS=0 V, VDS=50 V, =100 kHz | 1182.1 | pF | ||
| Coss | Output capacitance | VGS=0 V, VDS=50 V, =100 kHz | 199.5 | pF | ||
| Crss | Reverse transfer capacitance | VGS=0 V, VDS=50 V, =100 kHz | 4.1 | pF | ||
| td(on) | Turn-on delay time | VGS=10 V, VDS=50 V, RG=2 , ID=10 A | 17.9 | ns | ||
| tr | Rise time | VGS=10 V, VDS=50 V, RG=2 , ID=10 A | 4.0 | ns | ||
| td(off) | Turn-off delay time | VGS=10 V, VDS=50 V, RG=2 , ID=10 A | 34.9 | ns | ||
| tf | Fall time | VGS=10 V, VDS=50 V, RG=2 , ID=10 A | 5.5 | ns | ||
| Qg | Total gate charge | ID=10 A, VDS=50 V, VGS=10 V | 18.4 | nC | ||
| Qgs | Gate-source charge | ID=10 A, VDS=50 V, VGS=10 V | 3.3 | nC | ||
| Qgd | Gate-drain charge | ID=10 A, VDS=50 V, VGS=10 V | 3.1 | nC | ||
| Vplateau | Gate plateau voltage | ID=10 A, VDS=50 V, VGS=10 V | 2.8 | V | ||
| IS | Diode forward current | VGS<Vth | 60 | A | ||
| ISP | Pulsed source current | VGS<Vth | 180 | A | ||
| VSD | Diode forward voltage | IS=20 A, VGS=0 V | 1.3 | V | ||
| trr | Reverse recovery time | IS=10 A, di/dt=100 A/s | 41.8 | ns | ||
| Qrr | Reverse recovery charge | IS=10 A, di/dt=100 A/s | 36.1 | nC | ||
| Irrm | Peak reverse recovery current | IS=10 A, di/dt=100 A/s | 1.4 | A | ||
| Package Mechanical Data - DFN3*3-8L | ||||||
| Symbol | Common | mm | Min | Nom | Max | |
| A | 0.70 | 0.75 | 0.85 | |||
| A1 | / | / | 0.05 | |||
| b | 0.20 | 0.30 | 0.40 | |||
| c | 0.10 | 0.152 | 0.25 | |||
| D | 3.15 | 3.30 | 3.45 | |||
| D1 | 3.00 | 3.15 | 3.25 | |||
| D2 | 2.29 | 2.45 | 2.65 | |||
| E | 3.15 | 3.30 | 3.45 | |||
| E1 | 2.90 | 3.05 | 3.20 | |||
| E2 | 1.54 | 1.74 | 1.94 | |||
| E3 | 0.28 | 0.48 | 0.65 | |||
| E4 | 0.37 | 0.57 | 0.77 | |||
| E5 | 0.10 | 0.20 | 0.30 | |||
| e | 0.60 | 0.65 | 0.70 | |||
| K | 0.59 | 0.69 | 0.89 | |||
| L | 0.30 | 0.40 | 0.50 | |||
| L1 | 0.06 | 0.125 | 0.20 | |||
| t | 0 | 0.075 | 0.13 | |||
| 10 | 12 | 14 | ||||
2410121715_Leiditech-BUK7M12-60E_C3647077.pdf
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