Compact SOT 23 N Channel MOSFET KUU BSS138 with 220mA Continuous Current and Low On State Resistance
Key Attributes
Model Number:
BSS138
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
220mA
RDS(on):
6Ω@4.5V
Operating Temperature -:
-55℃~+150℃@(Tj)
Gate Threshold Voltage (Vgs(th)):
1.6V@1mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Output Capacitance(Coss):
25pF
Input Capacitance(Ciss):
50pF
Pd - Power Dissipation:
225mW
Gate Charge(Qg):
-
Mfr. Part #:
BSS138
Package:
SOT-23
Product Description
Product Overview
The BSS138 is an N-Channel Enhancement-Mode MOS Field Effect Transistor designed for various electronic applications. It offers a drain-source voltage of up to 50V and a continuous drain current of 220mA, with a pulsed drain current capability of 880mA. This device is suitable for general-purpose switching and amplification tasks.
Product Attributes
- Device Marking: BSS138=SS
- Package Type: SOT-23
Technical Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit | Notes |
| Drain-Source Breakdown Voltage | BVDSS | 50 | V | (ID=250uA,VGS=0V) | ||
| Gate Threshold Voltage | VGS(th) | 0.8 | 1.6 | V | (ID=1mA,VGS= VDS) | |
| Diode Forward Voltage Drop | VSD | 1.4 | V | (ISD=220mA,VGS=0V) | ||
| Zero Gate Voltage Drain Current | IDSS | 0.5 | 100 | uA | (VGS=0V, VDS= BVDSS) | |
| Zero Gate Voltage Drain Current | IDSS | 0.5 | nA | (VGS=0V, VDS=0.6BVDSS) | ||
| Gate Body Leakage | IGSS | +100 | nA | (VGS=+20V, VDS=0V) | ||
| Static Drain-Source On-State Resistance | RDS(ON) | 3.5 | (ID=220mA,VGS=10V) | |||
| Static Drain-Source On-State Resistance | RDS(ON) | 6 | (ID=220mA,VGS=4.5V) | |||
| Input Capacitance | CISS | 50 | pF | (VGS=0V, VDS=25V,f=1MHz) | ||
| Common Source Output Capacitance | COSS | 25 | pF | (VGS=0V, VDS=25V,f=1MHz) | ||
| Turn-ON Time | t(on) | 20 | ns | (VDS=30V, ID=200mA, RGEN=25) | ||
| Turn-OFF Time | t(off) | 20 | ns | (VDS=30V, ID=200mA, RGEN=25) | ||
| Total Device Dissipation | PD | 225 | mW | TA=25 | ||
| Derate above25 | 1.8 | mW/ | ||||
| Thermal Resistance Junction to Ambient | RJA | 350 | /W | |||
| Junction and Storage Temperature | TJ,Tstg | -55 | +150 |
2410121519_KUU-BSS138_C3015220.pdf
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