Low On Resistance N Channel MOSFET KUU AP2306GN Suitable for Portable Devices and DC DC Converters
Key Attributes
Model Number:
AP2306GN
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6A
RDS(on):
25mΩ@4.5V,6A
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
60pF@10V
Number:
1 N-channel
Pd - Power Dissipation:
1.25W
Input Capacitance(Ciss):
574pF@10V
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
AP2306GN
Package:
SOT-23
Product Description
Product Overview
This N-Channel MOSFET, designed for SOT-23 plastic encapsulation, offers a 20V Drain-Source voltage capability. It features low on-resistance at various gate-source voltages (25m@4.5V and 35m@2.5V) and a continuous drain current of 6A. Key advantages include TrenchFET technology for improved performance. It is suitable for load switching in portable devices and DC/DC converters.
Product Attributes
- Marking: AP2306GN
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | 6 | A | |||
| Continuous Source-Drain Current(Diode Conduction) | IS | 0.6 | A | |||
| Power Dissipation | PD | 1.25 | W | |||
| Thermal Resistance from Junction to Ambient (t≤5s) | RθJA | 150 | °C/W | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature | TSTG | -55 | +150 | °C | ||
| Static Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250µA | 20 | V | ||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250µA | 0.45 | 1 | V | |
| Gate-body leakage | IGSS | VDS =0V, VGS =±12V | ±100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS =16V, VGS =0V | 1 | µA | ||
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID = 6A | 22 | 25 | mΩ | |
| Drain-source on-resistance | RDS(on) | VGS =2.5V, ID =4A | 28 | 35 | mΩ | |
| Forward transconductance | gfs | VDS =5V, ID =6A | 8 | S | ||
| Diode forward voltage | VSD | IS=1A, VGS=0V | 0.74 | 1.28 | V | |
| Total gate charge | Qg | VDS =10V, VGS =4.5V, ID =6A | 7.7 | 10 | nC | |
| Gate-source charge | Qgs | 0.32 | nC | |||
| Gate-drain charge | Qgd | 2.1 | nC | |||
| Input capacitance | Ciss | VDS =10V, VGS =0V, f=1MHz | 574 | pF | ||
| Output capacitance | Coss | 70 | pF | |||
| Reverse transfer capacitance | Crss | 60 | pF | |||
| Turn-on delay time | td(on) | VDD=10V RL=5.5Ω, ID ≈3.6A, VGEN=4.5V,Rg=6Ω | 78.7 | ns | ||
| Rise time | tr | 128 | ns | |||
| Turn-off delay time | td(off) | 453 | ns | |||
| Fall time | tf | 80.9 | ns |
2410121242_KUU-AP2306GN_C6562204.pdf
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