Load Switching N Channel MOSFET KUU AO3406 with 3.5 Amp Continuous Drain Current and 30 Volt rating

Key Attributes
Model Number: AO3406
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3.5A
RDS(on):
90mΩ@4.5V
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
29pF
Number:
1 N-channel
Output Capacitance(Coss):
65pF
Input Capacitance(Ciss):
305pF
Pd - Power Dissipation:
750mW
Gate Charge(Qg):
4.5nC@4.5V
Mfr. Part #:
AO3406
Package:
SOT-23-3L
Product Description

Product Overview

This N-Channel 30-V(D-S) MOSFET features low on-resistance and is designed for load switching in portable devices and DC/DC converters. Its TrenchFET Power MOSFET technology offers efficient performance.

Product Attributes

  • Marking: AO3406

Technical Specifications

ParameterSymbolTest ConditionMinTypMaxUnit
Drain-Source VoltageVDS30V
Gate-Source VoltageVGS20V
Continuous Drain CurrentID3.5A
Pulsed Diode CurrentIDM20A
Continuous Source-Drain Current (Diode Conduction)IS0.8A
Power DissipationPD0.75W
Thermal Resistance from Junction to Ambient (t5s)RJA150/W
Operating Junction TemperatureTJ150
Storage TemperatureTSTG-55+150
Static Drain-source breakdown voltageV(BR)DSSVGS = 0V, ID = 250A30V
Gate-source threshold voltageVGS(th)VDS =VGS, ID = 250A13V
Gate-source leakageIGSSVDS =0V, VGS = 20V100nA
Zero gate voltage drain currentIDSSVDS = 30V, VGS =0V1A
Drain-source on-state resistanceRDS(on)VGS = 10V, ID = 3.5A4065m
Drain-source on-state resistanceRDS(on)VGS = 4.5V, ID = 2.8A5390m
Forward transconductancegfsVDS = 4.5V, ID = 3.5A7S
Diode forward voltageVSDIS= 1.25A,VGS=0V0.81.3V
Input capacitanceCissVDS = 15V,VGS = 0V, f=1MHz305pF
Output capacitanceCossVDS = 15V,VGS = 0V, f=1MHz65pF
Reverse transfer capacitanceCrssVDS = 15V,VGS = 0V, f=1MHz29pF
Total gate chargeQgVDS = 18V,VGS = 4.5V, ID = 3.5A34.5nC
Gate-source chargeQgsVDS = 18V,VGS = 4.5V, ID = 3.5A1.6nC
Gate-drain chargeQgVDS = 18V,VGS = 4.5V, ID = 3.5A0.6nC
Gate resistanceRgf=1MHz5
Turn-on delay timetd(on)VDD= 10V RL=10, ID 3A, VGEN= 4.5V,Rg=6711ns
Rise timetrVDD= 10V RL=10, ID 3A, VGEN= 4.5V,Rg=61218ns
Turn-off delay timetd(off)VDD= 10V RL=10, ID 3A, VGEN= 4.5V,Rg=61425ns
Fall timetfVDD= 10V RL=10, ID 3A, VGEN= 4.5V,Rg=6610ns
Continuous Source-Drain Diode CurrentISTc=251.3A
Pulsed Diode forward CurrentISM20A

2410010101_KUU-AO3406_C2909910.pdf

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