Low Gate Charge Dual N Channel 30V Power MOSFET KUU AO6800 Ideal for PWM and Load Switch

Key Attributes
Model Number: AO6800
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3.4A
Operating Temperature -:
-
RDS(on):
55mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
17pF
Number:
1 N-channel
Output Capacitance(Coss):
35pF
Input Capacitance(Ciss):
235pF
Pd - Power Dissipation:
1.15W
Gate Charge(Qg):
10nC@10V
Mfr. Part #:
AO6800
Package:
SOT-23-6L
Product Description

Product Overview

The AO6800 is a Dual N-Channel 30V Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the ability to operate at gate voltages as low as 2.5V. This makes it suitable for load switch and PWM applications.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

ParameterSymbolTest ConditionMinTypMaxUnit
Static Electrical CharacteristicsV(BR)DSSVGS = 0V, ID = 250A30V
VGS(th)VDS =VGS, ID = 250A0.71.5V
IGSSVDS =0V, VGS = 12V100nA
IDSSVDS = 30V, VGS =0V1A
Static Drain-Source On-ResistanceRDS(on)VGS = 10V, ID = 3.4A4655m
VGS = 4.5V, ID = 3A4765m
VGS = 2.5V, ID = 2.8A5880m
Forward transconductancegfsVDS = 5V, ID = 3.4A14S
Diode forward voltageVSDIS= 1A,VGS=0V0.81.2V
Maximum Body-Diode Continuous CurrentIS1.5A
Dynamic CharacteristicsCissVDS = 15V, VGS =0V, f=1MHz235pF
Coss35pF
Crss17pF
Gate ChargeQgVDS = 15V, VGS = 10V, ID =3.4A10nC
Qgs4.7nC
Qgd0.95nC
Gate resistanceRgf=1MHz4.48.8
Switching Characteristicstd(on)VDS= 15V RL=4.4, ID 3.4A, VGS= 10V,Rg=31220ns
tr5075ns
td(off)1220ns
tf2235ns
Body Diode CharacteristicsTrrIF=3.4A, dI/dt=100A/s8.5ns
QrrIF=3.4A, dI/dt=100A/s2.55nC

2410121839_KUU-AO6800_C22381406.pdf

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