Industrial Grade TRIAC KY BTA26-800B Featuring 800V Voltage and 25A RMS Current for Power Management
Key Attributes
Model Number:
BTA26-800B
Product Custom Attributes
Holding Current (Ih):
80mA
Voltage - On State(Vtm):
1.55V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
-
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
300A
SCR Type:
1 TRIAC
Gate Trigger Voltage (Vgt):
1.5V
Operating Temperature:
-40℃~+150℃
Mfr. Part #:
BTA26-800B
Package:
TO-220
Product Description
ShenZhenHanKingyuan Electronic BTA/BTB26 Series TRIACs
The BTA/BTB26 Series TRIACs from ShenZhenHanKingyuan Electronic are high-performance components designed for 3 and 4 quadrant applications. With an RMS on-state current of 25A and a low forward voltage (VGT) of 1.5V, these TRIACs offer efficient power control. They are available in voltage ratings of 800V and 1000V (VDRM/VRRM). Suitable for a wide range of applications including washing machines, vacuum cleaners, massagers, solid-state relays, and AC motor speed regulation.
Product Attributes
- Brand: ShenZhenHanKingyuan Electronic
- Product Series: BTA/BTB26 Series
- Origin: Shenzhen, China
- Trademark: KY logo (registered)
Technical Specifications
| Model | Quadrant | VDRM/VRRM (V) | IT(RMS) (A) | ITSM (A) | VTM (V) | IGT (mA) | Rth(j-c) (C/W) | Package Type |
| BTA26-800 | 3 / 4 | 800 | 25 | 280/300 | 1.55 | 35 (I,II,III) | 1.1 | TO-220A (Insulated), TO-220B (Non-Insulated), TO-263, TO-3P (Insulated) |
| BTA26-1000 | 3 / 4 | 1000 | 25 | 280/300 | 1.55 | 35 (I,II,III) | 1.1 | TO-220A (Insulated), TO-220B (Non-Insulated), TO-263, TO-3P (Insulated) |
Electrical Characteristics (Tj=25C unless otherwise specified)
| Symbol | Parameter | Test Conditions | Value | Unit |
| IDRM | Repetitive Peak Off-State Current | Tj=25C | 5 | uA |
| IDRM | Repetitive Peak Off-State Current | Tj=125C | 3 | mA |
| IRRM | Repetitive Peak Reverse Current | Tj=25C | 5 | uA |
| IRRM | Repetitive Peak Reverse Current | Tj=125C | 3 | mA |
| VTM | Forward "on" voltage | IT=35A, tp=380us | 1.55 | V |
| VGT | Gate trigger voltage | VD=12V, RL=30 | 1.5 | V |
| di/dt | Critical rate of rise of on-state current | I,II,III, F=120Hz,Tj=125C, IG=2xIGT,tr100ns | 50 (I,II,III) / 10 (IV) | A/us |
| IGT | Gate trigger current | I,II,III, VD=12V, RL=30 | 35 (I) / 50 (II) / 50 (III) / 100 (IV) | mA |
| IH | Holding current | IT=0.2A | 60 (I) / 80 (II) / 80 (III) | mA |
| VDG | Gate non-trigger voltage | ALL, VD=VDRM, TJ=125C | 0.2 | V |
| dv/dt | Critical-rate of rise of commutation voltage | TJ=125C, VD=2/3VDRM, Gate | 400 (I) / 1000 (II) / 500 (III) | V/us |
| Rth(j-c) | Thermal resistance Junction to case | 1.1 | C/W | |
| Rth(j-a) | Thermal resistance Junction to ambient | 50 | C/W |
Absolute Maximum Ratings (Tj=25C unless otherwise specified)
| Symbol | Parameter | Conditions | Unit | |
| VDRM, VRRM | Repetitive Peak Off-State Voltage | BTA26-800: 800V; BTA26-1000: 1000V | V | |
| IT(RMS) | R.M.S On-State Current | Tc=110C | 25 | A |
| ITSM | Surge On-State Current | tp=10ms / tp=16.7ms | 280/300 | A |
| It | It for fusing | tp=10ms | 520 | As |
| PG(AV) | Average Gate Power Dissipation | Tj=125C | 1 | W |
| IGM | Peak Gate Current | Tj=125C | 6 | A |
| Tj | Operating Junction Temperature | -40~125 | C | |
| TSTG | Storage Temperature | -40~150 | C |
2410121317_KY-BTA26-800B_C2831706.pdf
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