KY BT136S 800E Triac 4A RMS On State Current Designed for Solid State Relays and Motor Speed Control
Key Attributes
Model Number:
BT136S-800E
Product Custom Attributes
Holding Current (Ih):
60mA
Current - Gate Trigger(Igt):
100mA
Voltage - On State(Vtm):
1.7V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
4A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
27A
SCR Type:
1 TRIAC
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.5V
Mfr. Part #:
BT136S-800E
Package:
TO-252
Product Description
ShenZhenHanKingyuan Electronic BT136 Series 4A TRIACs
The BT136 Series TRIACs from ShenZhenHanKingyuan Electronic are 4-quadrant TRIACs designed for AC power control applications. They offer a high RMS on-state current of 4A and are available with repetitive peak off-state voltages of 600V and 800V. These TRIACs are suitable for a wide range of applications including washing machines, vacuum cleaners, massagers, solid-state relays, and AC motor speed regulation.
Product Attributes
- Brand: ShenZhenHanKingyuan Electronic
- Origin: Shenzhen
- Product Line: BT136 Series
- Type: 4 Quadrants TRIACs
- Certifications: Not specified
- Material: Not specified
- Color: Not specified
Technical Specifications
| Parameter | Conditions | BT136-600 | BT136-800 | Unit |
|---|---|---|---|---|
| Repetitive Peak Off-State Voltage (VDRM/VRRM) | 600 | 800 | V | |
| R.M.S On-State Current (IT(RMS)) | Tc=110C | 4 | A | |
| Surge On-State Current (ITSM) | 25/27 | A | ||
| It for fusing | Tp=10ms | 3.1 | As | |
| Average Gate Power Dissipation (PG(AV)) | Tj=125C | 1 | W | |
| Peak Gate Current (IGM) | tp=20us, Tj=125C | 2 | A | |
| Operating Junction Temperature (Tj) | -40~125 | C | ||
| Storage Temperature (TSTG) | -40~150 | C | ||
| Repetitive Peak Off-State Current (IDRM) | Tj=25C | 10 | uA | |
| Repetitive Peak Off-State Current (IDRM) | Tj=125C | 0.5 | mA | |
| Repetitive Peak Reverse Current (IRRM) | Tj=25C | 10 | uA | |
| Repetitive Peak Reverse Current (IRRM) | Tj=125C | 0.5 | mA | |
| Forward "on" voltage (VTM) | IT=5A, tp=380us | 1.7 | V | |
| Gate non-trigger voltage (VGD) | VD=12V, Tj=125C | 0.2 | V | |
| Holding current (IH) | IT=100mA | 10 | 25 | mA |
| Holding current (IH) | IT=100mA | 30 | 60 | mA |
| Gate trigger voltage (VGT) | VD=12V | 1.5 | V | |
| Gate trigger current (IGT) | VD=12V, IGT=0.1A | 5 | 10 | mA |
| Gate trigger current (IGT) | VD=12V, IGT=0.1A | 25 | 50 | mA |
| Gate trigger current (IGT) | VD=12V, IGT=0.1A | 10 | 25 | mA |
| Gate trigger current (IGT) | VD=12V, IGT=0.1A | 70 | 100 | mA |
| Critical-rate of rise of commutation current (di/dt) | IT=6A, IGT=0.2A, dIg/dt=0.2A/us | 50 | 10 | A /us |
| Critical-rate of rise of commutation voltage (dv/dt) | TJ=125C, VD=2/3VDRM | 5 | 10 | V/us |
| Critical-rate of rise of commutation voltage (dv/dt) | TJ=125C, VD=2/3VDRM | 50 | 200 | V/us |
2410311002_KY-BT136S-800E_C7420794.pdf
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