High Frequency Operation Diode LGE MUR3060P with Fast Reverse Recovery and Rugged Guard Ring
Key Attributes
Model Number:
MUR3060P
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
350A
Reverse Leakage Current (Ir):
10uA@600V
Reverse Recovery Time (trr):
35ns
Operating Junction Temperature Range:
-50℃~+150℃
Voltage - DC Reverse (Vr) (Max):
600V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
1.65V
Current - Rectified:
30A
Mfr. Part #:
MUR3060P
Package:
TO-247-2
Product Description
Product Overview
The MUR3060P is a Super-Fast Recovery Diode featuring a FRED chip for low forward voltage drop and fast reverse recovery time. It is designed for high-frequency operation and utilizes high-purity, high-temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance. A guard ring ensures ruggedness and long-term reliability. Typical applications include switching power supplies, converters, freewheeling diodes, and reverse battery protection.
Product Attributes
- Chip Technology: FRED
- Encapsulation: High-purity, high-temperature epoxy
- Flammability Rating: UL 94 V-0
- Compliance: RoHS-compliant
- Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102
- Package: TO-247AC
Technical Specifications
| Parameter | Symbol | Unit | Test Conditions | MUR3060P |
| Device marking code | MUR3060P | |||
| Repetitive Peak Reverse Voltage | VRRM | V | 600 | |
| Average Rectified Output Current @60Hz sine wave, R-load, Tc(FIG.1) | IO | A | 30 | |
| Surge(Non-repetitive)Forward Current @60Hz half sine-wave, 1 cycle, Ta=25 | IFSM | A | Ta=25 | 350 |
| Current Squared Time @1mst8.3ms | I2t | A2s | Tj=25 | 373 |
| Single Pulse Avalanche Energy @ Tp=40uS, Tj=25,L=15mH | EAS | mJ | Tj=25,L=15mH | 210 |
| Storage Temperature | Tstg | -55 ~ +175 | ||
| Junction Temperature | Tj | -55 ~ +175 | ||
| Junction capacitance @4V,1MHz | Cj | pF | @4V,1MHz | 195 |
| Instantaneous forward voltage drop per diode | VFM | V | IFM=30.0A @Tj=25 | - 1.65 1.85 |
| Instantaneous forward voltage drop per diode | VFM | V | IFM=30.0A @Tj=125 | 1.55 1.70 |
| DC reverse current at rated DC blocking voltage per diode | IRRM1 | uA | VRM=VRRM Tj=25 | - - 5.0 |
| DC reverse current at rated DC blocking voltage per diode | IRRM2 | uA | VRM=VRRM Tj=125 | - - 200 |
| Reverse Recovery Time | Trr | ns | IF=0.5A IRM=1A IRR=0.25A Tj=25 | - 35 40 |
| Reverse Recovery Time | Trr | ns | IF=30A di/dt=-200A/us VRM=400V Tj=25 | - 6.5 - |
| Peak recovery current | IRRM | A | Tj=25 | - 6.5 - |
| Peak recovery current | IRRM | A | Tj=125 | - 16.5 - |
| Reverse recovery charge | Qrr | nC | Tj=25 | - 590 - |
| Reverse recovery charge | Qrr | nC | Tj=125 | - 2705 - |
| Thermal Resistance Between junction and case | RJ-C | /W | 1.0 | |
| Thermal Resistance Between junction and Air | RJ-A | /W | 50 |
2410121609_LGE-MUR3060P_C5291312.pdf
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