N Channel Enhancement Mode MOSFET KUU 2N7002KN3 with Low Threshold Voltage and Fast Switching Speed
Key Attributes
Model Number:
2N7002KN3
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340mA
RDS(on):
3.5Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3pF
Output Capacitance(Coss):
11pF
Input Capacitance(Ciss):
31pF
Pd - Power Dissipation:
710mW
Gate Charge(Qg):
1.3nC@10V
Mfr. Part #:
2N7002KN3
Package:
DFN1006-3L
Product Description
Product Overview
This N-Channel Enhancement Mode MOSFET features ESD protection up to 2KV (HBM), low threshold voltage, and fast switching speed. It is manufactured using an advanced trench process technology and is Halogen-Free & Lead-Free. Ideal for load switching in portable devices and as a voltage-controlled small signal switch.
Product Attributes
- Marking: 72K
- Package: DFN1006-3L
- Certifications: Halogen-Free & Lead-Free
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
| STATIC PARAMETERS | BVDSS | 60 | V | ID = 250 A | ||
| IDSS | 1 | A | VDS =60 V, VGS=0V | |||
| IGSS | 10 | A | VGS = 20 V | |||
| VGS(th) | 1 | 2 | V | VDS = VGS, ID = 250A | ||
| RDS(on) | 1.6 | 3 | VGS = 10 V, ID = 300mA | |||
| 2 | 5 | VGS =4.5V, ID = 200mA | ||||
| DYNAMIC PARAMETERS | Rg | 2 | VDS = 0 V, VGS=0V, f = 1 MHz | |||
| gfs | 307 | S | VDS =10V, ID =200mA | |||
| Ciss | 31 | pF | VDS=10V, VGS=0V, f=1MHz | |||
| Coss | 11 | pF | VDS=10V, VGS=0V, f=1MHz | |||
| Crss | 3 | pF | VDS=10V, VGS=0V, f=1MHz | |||
| Qg | 1.3 | nC | VDS = 30V, ID = 1 A, VGS = 10 V | |||
| Qgs | 0.5 | nC | VDS =30 V, ID = 1 A, VGS = 10 V | |||
| Qgd | 0.2 | nC | VDS =30 V, IDS = 1 A, VGS = 10 V | |||
| td(on) | 4.8 | nS | VDD=30V, ID = 1A, Rg = 6.8 , VGS = 10 V | |||
| tr | 3 | nS | VDD=30V, ID = 1A, Rg = 6.8 , VGS = 10 V | |||
| td(off) | 4.4 | nS | VDD=30V, ID = 1A, Rg = 6.8 , VGS = 10 V | |||
| tf | 15 | nS | VDD=30V, ID = 1A, Rg = 6.8 , VGS = 10 V | |||
| Body-Diode | VSD | 1.1 | V | IS =115mA, VGS = 0 V | ||
| trr | 8.4 | nS | IS =1 A, di/dt = -100 A / s | |||
| Qrr | 3.6 | nC | IS =1 A, di/dt = -100 A / s | |||
| Absolute Maximum Ratings | VDS | 60 | V | |||
| VGS | 20 | V | ||||
| ID | 0.34 | A | ||||
| IDM | 1.8 | A | Pulsed1) | |||
| Ptot | 0.71 | W | 2) | |||
| TJ | -55 | 150 | ||||
| Tstg | -55 | 150 | ||||
| Thermal Characteristics | RJA | 175 | /W | 2) |
2504101957_KUU-2N7002KN3_C46635140.pdf
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