Voltage Controlled N Channel Mosfet LGE 2N7002 with Low Gate Body Leakage in Compact SOT 23 Package
Key Attributes
Model Number:
2N7002
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
115mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
7.5Ω@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 N-channel
Output Capacitance(Coss):
25pF
Input Capacitance(Ciss):
50pF
Pd - Power Dissipation:
225mW
Mfr. Part #:
2N7002
Package:
SOT-23
Product Description
Product Overview
The 2N7002 is an N-Channel MOSFET designed for low RDS(ON) voltage-controlled small signal switching applications. It features a high-density cell design, rugged and reliable construction, and high saturation current capability.
Product Attributes
- Brand: LGE
- Model: 2N7002
- Type: Mosfet (N-Channel)
- Package: SOT-23
- Website: http://www.lgesemi.com
- Email: lge@lgesemi.com
- Revision: 20170701-P1
Technical Specifications
| Parameter | Symbol | Test Conditions | MIN | TYP | MAX | Units |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0 V, ID=10 A | 60 | V | ||
| Gate-Threshold Voltage | Vth(GS) | VDS=VGS, ID=250 A | 1 | 2.5 | V | |
| Gate-body Leakage | lGSS | VDS=0 V, VGS=25 V | 80 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60 V, VGS=0 V | 80 | nA | ||
| On-state Drain Current | ID(ON) | VGS=10 V, VDS=7 V | 500 | mA | ||
| Drain-Source On-Resistance | rDS(0n) | VGS=10 V, ID=500mA | 1 | 7.5 | ||
| Drain-Source On-Resistance | rDS(0n) | VGS=5 V, ID=50mA | 1 | 7.5 | ||
| Forward Transconductance | gfs | VDS=10 V, ID=200mA | 80 | 500 | mS | |
| Drain-source on-voltage | VDS(on) | VGS=10V, ID=500mA | 0.5 | 3.75 | V | |
| Drain-source on-voltage | VDS(on) | VGS=5V, ID=50mA | 0.05 | 0.375 | V | |
| Diode Forward Voltage | VSD | IS=115mA, VGS=0 V | 0.55 | 1.2 | V | |
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1MHz | 50 | pF | ||
| Output Capacitance | COSS | VDS=25V, VGS=0V, f=1MHz | 25 | pF | ||
| Reverse Transfer Capacitance | CrSS | VDS=25V, VGS=0V, f=1MHz | 5 | pF | ||
| Turn-on Time | td(on) | VDD=25 V, RL=50, ID=500mA,VGEN=10 V, RG=25 | 20 | ns | ||
| Turn-off Time | td(off) | VDD=25 V, RL=50, ID=500mA,VGEN=10 V, RG=25 | 40 | ns |
2410121813_LGE-2N7002_C402224.pdf
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