Switching N Channel MOSFET Leiditech AUIRFR540Z with Low Gate Charge and High Drain Current Capability

Key Attributes
Model Number: AUIRFR540Z
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+175℃
RDS(on):
28mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
250pF
Number:
1 N-channel
Pd - Power Dissipation:
85W
Input Capacitance(Ciss):
2nF
Gate Charge(Qg):
39nC@10V
Mfr. Part #:
AUIRFR540Z
Package:
TO-252
Product Description

Product Overview

The AUIRFR540Z is an N-Channel Enhancement Mode MOSFET designed with advanced trench technology, offering excellent RDS(ON), low gate charge, and the capability to operate with gate voltages as low as 4.5V. This device is well-suited for battery protection and other switching applications, providing reliable performance in demanding environments.

Product Attributes

  • Brand: Leiditech
  • Product ID: AUIRFR540Z
  • Package: TO-252
  • Channel Type: N-Channel
  • Mode: Enhancement Mode
  • Technology: Advanced Trench Technology
  • Date: 12.01.2019
  • Revision: 2.0

Technical Specifications

Symbol Parameter Condition Limit Unit
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage 20 V
ID Drain Current-Continuous 50 A
ID (100) Drain Current-Continuous(TC=100) 21 A
IDM Pulsed Drain Current 70 A
PD Maximum Power Dissipation 85 W
Derating factor 0.57 W/
EAS Single pulse avalanche energy (Note 5) 256 mJ
TJ,TSTG Operating Junction and Storage Temperature Range -55 To 175
RJC Thermal Resistance, Junction-to-Case (Note 2) 1.8 /W
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250A 100 V
IDSS Zero Gate Voltage Drain Current VDS=100V,VGS=0V 1 A
IGSS Gate-Body Leakage Current VGS=20V,VDS=0V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS,ID=250A 1 - 3 V
RDS(ON) Drain-Source On-State Resistance VGS=10V, ID=20A - 24 28 m
RDS(ON) Drain-Source On-State Resistance VGS=4.5V, ID=10A - 28 30 m
gFS Forward Transconductance VDS=5V,ID=10A - 15 - S
Ciss Input Capacitance VDS=25V,VGS=0V, F=1.0MHz - 2000 - PF
Coss Output Capacitance - 300 - PF
Crss Reverse Transfer Capacitance - 250 - PF
td(on) Turn-on Delay Time VDD=50V,RL=5, VGS=10V,RGEN=3 - 7 - nS
tr Turn-on Rise Time - 7 - nS
td(off) Turn-Off Delay Time - 29 - nS
tf Turn-Off Fall Time - 7 - nS
Qg Total Gate Charge VDS=50V,ID=10A, VGS=10V - 39 - nC
Qgs Gate-Source Charge - 8 - nC
Qgd Gate-Drain Charge - 12 - nC
VSD Diode Forward Voltage (Note 3) VGS=0V,IS=20A - - 1.2 V
IS Diode Forward Current (Note 2) - - 30 A
trr Reverse Recovery Time TJ = 25C, IF = 10A, di/dt = 100A/s(Note3) - 32 - nS
Qrr Reverse Recovery Charge - 53 - nC

Applications

  • Battery protection
  • Load switch
  • Uninterruptible power supply
  • Other Switching applications

Marking and Ordering Information

Product ID Pack Marking Qty(PCS)
AUIRFR540Z AUIRFR540Z AP50N10D 2500

Package Mechanical Data (TO-252-3L)

Ref Min (mm) Typ (mm) Max (mm) Min (in) Typ (in) Max (in)
A2.100.083
A200.6600.026
B0.402.500.0160.098
C0.100.860.0040.034
D0.600.024
E6.409.5010.700.2520.3740.421
G0.3740.4210.0150.017
H5.906.300.2320.248
L067
V11.351.650.0530.065
V2067
B25.185.480.2040.216
C20.440.580.0170.023
D14.474.670.1760.184
E15.300.209
L21.091.210.0430.048

Reel Specification (TO-252)

Ref Min (mm) Typ (mm) Max (mm) Min (in) Typ (in) Max (in)
W15.9016.100.6260.634
E1.651.850.0650.073
F7.407.600.2910.299
D01.401.600.0550.063
D11.401.600.0550.063
P07.908.100.3110.319
P110.4510.600.4110.417
P21.902.100.0750.083
A06.857.000.2700.276
B04.474.670.1760.184
K02.682.880.1060.113
T0.100.004
t139.8040.201.5671.583
32932912.953
13130.512
20200.787
16.0016.000.630
1.751.750.069
7.507.500.295
1.501.500.059
1.501.500.059
4.004.000.157
8.008.000.315
2.002.000.079
10.5010.500.413

Contact Information

  • Company: Shanghai Leiditech Electronic Co.,Ltd
  • Email: sale1@leiditech.com
  • Tel: +86- 021 50828806
  • Fax: +86- 021 50477059
  • Website: www.leiditech.com

2410121503_Leiditech-AUIRFR540Z_C5128400.pdf

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