Silicon Controlled Rectifier SCR Littelfuse MCR106-6G with 2.55 Amp Average On State Current Rating
Key Attributes
Model Number:
MCR106-6G
Product Custom Attributes
Mfr. Part #:
MCR106-6G
Package:
TO-225-3
Product Description
Product Overview
The MCR106-6 and MCR106-8 are sensitive gate silicon controlled rectifiers (SCRs) designed for high-volume consumer applications. These PNPN devices offer reliability and uniformity due to their glass-passivated surface and are power-rated at economical prices. They feature practical level triggering and holding characteristics, with a flat, rugged Thermopad construction for low thermal resistance, high heat dissipation, and durability. These SCRs are suitable for applications such as temperature, light, and speed control, process and remote control, and warning systems where reliable operation is crucial. Pb-free packages are available.
Product Attributes
- Brand: ON Semiconductor
- Certifications: Pb-Free Packages Available
Technical Specifications
| Parameter | Symbol | MCR106-6 | MCR106-8 | Unit |
| Peak Repetitive Off-State Voltage | VDRM, VRRM | 400 | 600 | V |
| On-State RMS Current (TC = 93C) | IT(RMS) | 4.0 | 4.0 | A |
| Average On-State Current (TC = 93C) | IT(AV) | 2.55 | 2.55 | A |
| Peak Non-repetitive Surge Current (1/2 Cycle, 60 Hz) | ITSM | 25 | 25 | A |
| Circuit Fusing Considerations (t = 8.3 ms) | I2t | 2.6 | 2.6 | A2s |
| Forward Peak Gate Power (TC = 93C, Pulse Width 1.0 s) | PGM | 0.5 | 0.5 | W |
| Forward Average Gate Power (TC = 93C, t = 8.3 ms) | PG(AV) | 0.1 | 0.1 | W |
| Forward Peak Gate Current (TC = 93C, Pulse Width 1.0 s) | IGM | 0.2 | 0.2 | A |
| Peak Reverse Gate Voltage (TC = 93C, Pulse Width 1.0 s) | VRGM | 6.0 | 6.0 | V |
| Operating Junction Temperature Range | TJ | -40 to +110 | -40 to +110 | C |
| Storage Temperature Range | Tstg | -40 to +150 | -40 to +150 | C |
| Thermal Resistance, Junction-to-Case | RJC | 3.0 | 3.0 | C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | 75 | 75 | C/W |
| Peak Repetitive Forward or Reverse Blocking Current (TJ = 25C) | IDRM, IRRM | 10 | 10 | A |
| Peak Repetitive Forward or Reverse Blocking Current (TJ = 110C) | IDRM, IRRM | 200 | 200 | A |
| Peak Forward On-State Voltage (ITM = 4 A Peak) | VTM | 2.0 | 2.0 | V |
| Gate Trigger Current (VAK = 7 Vdc, RL = 100 , TC = -40C) | IGT | 500 | 500 | A |
| Gate Trigger Voltage (VAK = 7 Vdc, RL = 100 ) | VGT | 1.0 | 1.0 | V |
| Gate Non-Trigger Voltage (VAK = 12 Vdc, RL = 100 , TJ = 110C) | VGD | 0.2 | 0.2 | V |
| Holding Current (VAK = 7 Vdc, Initiating Current = 200 mA, RGK = 1 k) | IH | 5.0 | 5.0 | mA |
| Critical Rate-of-Rise of Off-State Voltage (TJ = 110C, RGK = 1 k) | dv/dt | 10 | 10 | V/s |
2411271947_Littelfuse-MCR106-6G_C151684.pdf
Related Products
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification
Product OverviewThe BZX84B3V6Q thru BZX84B36Q series are small signal Zener diodes designed for general regulation functions. They feature epoxy encapsulation meeting UL-94 V-0 flammability rating and are halogen-free. These diodes offer a Zener voltage range from 3.6V to 36V with approximately 2% ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
