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quality Littelfuse IXYS DSEI60-02A Fast Recovery Diode with Low Switching Losses and Planar Passivated Chip factory
quality Littelfuse IXYS DSEI60-02A Fast Recovery Diode with Low Switching Losses and Planar Passivated Chip factory

Littelfuse IXYS DSEI60-02A Fast Recovery Diode with Low Switching Losses and Planar Passivated Chip

Key Attributes
Model Number: DSEI60-02A
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
600A
Reverse Leakage Current (Ir):
50uA@200V
Reverse Recovery Time (trr):
35ns
Operating Junction Temperature Range:
-40℃~+150℃
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
200V
Pd - Power Dissipation:
150W
Voltage - Forward(Vf@If):
1.08V@60A
Current - Rectified:
69A
Mfr. Part #:
DSEI60-02A
Package:
TO-247-2
Product Description

Product Overview

The DSEI 60-02A is a Fast Recovery Epitaxial Diode (FRED) designed for high-frequency switching applications. It features a planar passivated chip, very short recovery time, and extremely low switching losses, making it ideal for use as an antiparallel diode, anti-saturation diode, snubber diode, or free-wheeling diode in various power electronic circuits. Its advantages include high reliability, reduced voltage peaks, low noise switching, and lower operating temperatures or space-saving designs due to reduced cooling requirements. Applications range from converters and motor control circuits to switch mode power supplies (SMPS), inductive heating, uninterruptible power supplies (UPS), and ultrasonic equipment.

Product Attributes

  • Brand: IXYS
  • Standard Package: JEDEC TO-247 AD
  • Chip Technology: Planar passivated
  • Certifications: Epoxy meets UL 94V-0

Technical Specifications

Symbol Test Conditions Type Value Unit
VRSM / VRRM 200 V
DSEI 60-02A
IFRMS TVJ = TVJM 98 A
IFAVM TC = 85 C; rectangular, d = 0.5 69 A
IFSM tP < 10 s; rep. rating, pulse width limited by TVJM 800 A
TVJ = 45 C; t = 10 ms (50 Hz), sine 600 A
t = 8.3 ms (60 Hz), sine 650 A
TVJ = 150 C; t = 10 ms (50 Hz), sine 540 A
t = 8.3 ms (60 Hz), sine 580 A
I2t TVJ = 45 C; t = 10 ms (50 Hz), sine 1800 A2s
t = 8.3 ms (60 Hz), sine 1770 A2s
TVJ = 150 C; t = 10 ms (50 Hz), sine 1460 A2s
t = 8.3 ms (60 Hz), sine 1410 A2s
TVJ -40...+150 C
TVJM 150 C
Tstg -40...+150 C
Ptot TC = 25 C 150 W
Md Mounting torque 0.8...1.2 Nm
Weight 6 g
IR TVJ = 25 C; VR = VRRM typ. 50 A
TVJ = 25 C; VR = 0.8 VRRM max. 40 A
TVJ = 125 C; VR = 0.8 VRRM 11 mA
VF IF = 60 A; TVJ = 150 C 0.88 V
TVJ = 25 C 1.08 V
VT0 For power-loss calculations only 0.70 V
rT TVJ = TVJM 4.0 m
RthJC 0.75 K/W
RthCK 0.25 K/W
RthJA 35 K/W
trr IF = 1 A; -di/dt = 200 A/s; VR = 30 V; TVJ = 25 C typ. 35 ns
max. 50 ns
IRM VR = 100 V; IF = 60 A; -diF/dt = 200 A/s typ. 8 A
max. 10 A
L TVJ = 100 C 0.05 H
IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5
Data according to IEC 60747

Dimensions (TO-247 AD):

Dim Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 2.2 2.54 0.087 0.102

2410121848_Littelfuse-IXYS-DSEI60-02A_C499429.pdf

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