Littelfuse IXYS DH20-18A planar passivated chip diode featuring soft reverse recovery and dissipation

Key Attributes
Model Number: DH20-18A
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
150A
Reverse Leakage Current (Ir):
50uA@1800V
Reverse Recovery Time (trr):
300ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
1.8kV
Pd - Power Dissipation:
140W
Voltage - Forward(Vf@If):
2.24V@20A
Current - Rectified:
20A
Mfr. Part #:
DH20-18A
Package:
TO-247
Product Description

Product Overview

The DH20-18A is a high-performance, fast recovery diode featuring low loss and soft recovery characteristics. Designed with planar passivated chips, it offers very low leakage current, very short recovery times, and improved thermal behavior. Its very low Irm-values and soft reverse recovery contribute to reduced power dissipation and turn-on losses in commutating switches, while also minimizing EMI/RFI. This diode is avalanche voltage rated for reliable operation and is suitable for applications such as antiparallel diodes for high-frequency switching devices, antisaturation diodes, snubber diodes, and free-wheeling diodes. It is also utilized in rectifiers for switch mode power supplies (SMPS) and uninterruptible power supplies (UPS).

Product Attributes

  • Brand: IXYS
  • Part Number: DH20-18A
  • Package: TO-247
  • Certifications: RoHS compliant, Epoxy meets UL 94V-0
  • Recovery Behavior: Soft reverse recovery
  • Chip Technology: Planar passivated

Technical Specifications

Symbol Definition Conditions Unit typ. max. min.
VRRM max. repetitive reverse blocking voltage TVJ = 25C V 1800
VR(RRM) max. repetitive reverse blocking voltage V 1800
IF(AV) average forward current TC = 25C A 20
IFSM max. forward surge current t = 10 ms; (50 Hz), sine; TVJ = 45C A 150
VF forward voltage drop IF = 20 A; TVJ = 25C V 1.44 2.24
VF0 threshold voltage IF = 20 A; TVJ = 25C V 1.44
rF slope resistance for power loss calculation only IF = 20 A; TVJ = 25C m 43
IR reverse current, drain current VR = 900 V; TVJ = 25C A 125
IRM max. reverse recovery current IF = 20 A; diF/dt = 400 A/s; TVJ = 125C A 300 550
trr reverse recovery time IF = 20 A; diF/dt = 400 A/s; TVJ = 125C ns 25
Qrr reverse recovery charge IF = 20 A; diF/dt = 400 A/s; TVJ = 125C C 300
Erec recovery energy IF = 20 A; diF/dt = 400 A/s; TVJ = 125C mJ 15
RthJC thermal resistance junction to case K/W 0.9
RthCH thermal resistance case to heatsink K/W 0.3
Ptot total power dissipation TC = 25C W 140
TVJ virtual junction temperature C 150 -55
Tstg storage temperature C 150 -55
IRMS RMS current per terminal A 70
Mounting torque Nm 1.2 0.8
Weight g 6

2410121919_Littelfuse-IXYS-DH20-18A_C7496885.pdf

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