Durable Littelfuse IXYS DHG30I1200HA Sonic Fast Recovery Diode Suitable for High Frequency Switching

Key Attributes
Model Number: DHG30I1200HA
Product Custom Attributes
Reverse Leakage Current (Ir):
50uA@1.2kV
Reverse Recovery Time (trr):
200ns
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
1.2kV
Voltage - Forward(Vf@If):
1.95V@30A
Current - Rectified:
30A
Mfr. Part #:
DHG30I1200HA
Package:
TO-247-2
Product Description

Product Overview

The DHG 30 I 1200 HA is a high-performance Sonic Fast Recovery Diode designed for demanding applications. It features low loss and soft recovery characteristics, making it suitable as an antiparallel diode for high-frequency switching devices, antisaturation diode, snubber diode, and free-wheeling diode. This single diode in a TO-247 package offers very low leakage current, very short recovery time, improved thermal behavior, and very low Irm-values with soft reverse recovery for reduced EMI/RFI. Its avalanche voltage rating ensures reliable operation, and the low Irm minimizes power dissipation within the diode and turn-on losses in commutating switches. Applications include rectifiers in switch mode power supplies (SMPS) and uninterruptible power supplies (UPS).

Product Attributes

  • Brand: IXYS
  • Housing: TO-247AD (2)
  • Epoxy: Meets UL 94V-0
  • Compliance: RoHS compliant
  • Chip Technology: Planar passivated

Technical Specifications

Specification Conditions Min. Typ. Max. Unit
Maximum repetitive reverse voltage (VRRM) 1200 V
Reverse current (IRRM) VR = VRRM; TVJ = 125C 30 A
Forward voltage (VF) IF = 30 A; TVJ = 25C 1.95 2.26 V
Forward voltage (VF) IF = 30 A; TVJ = 125C 1.95 V
Threshold voltage (VF0) 1.25 V
Slope resistance (r F) 30 m
Junction capacitance (CJ) VR = 1200 V; f = 1 MHz; TVJ = 25C 25 pF
Reverse recovery time (trr) IF = 30 A; -diF/dt = 600 A/s; VR = 600 V; TVJ = 125C 200 ns
Maximum reverse recovery current (IRRM) IF = 30 A; -diF/dt = 600 A/s; VR = 600 V; TVJ = 125C 3.00 A
Reverse recovery charge (Qrr) IF = 30 A; -diF/dt = 600 A/s; VR = 600 V; TVJ = 125C 3.20 C
Recovery energy (Erec) IF = 30 A; -diF/dt = 600 A/s; VR = 600 V; TVJ = 125C 3.20 mJ
Maximum forward surge current (IFSM) t = 10 ms; sine 300 A
Average forward current (IF) TC = 90C 30 A
Total power dissipation (Ptot) TC = 150C 180 W
Thermal resistance junction to case (RthJC) 0.5 K/W
Thermal resistance case to heatsink (RthCH) 0.25 K/W
Virtual junction temperature (TVJ) -55 150 C
Storage temperature (Tstg) -55 150 C
Weight 6 g
Mounting torque 0.8 1.2 Nm
Mounting force with clip 20 N
Part number DHG 30 I 1200 HA
Similar Part (TO-247AD) DSEP30-12A DSEP29-12A DSEP30-12AR DSEP30-12CR

Note: Data according to IEC 60747 and per diode unless otherwise specified. IXYS reserves the right to change limits, conditions and dimensions.


2411220406_Littelfuse-IXYS-DHG30I1200HA_C461307.pdf

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