performance diode Leiditech SM5819WS designed for low voltage and high frequency inverter circuits
Key Attributes
Model Number:
SM5819WS
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
9A
Reverse Leakage Current (Ir):
1mA@40V
Voltage - DC Reverse (Vr) (Max):
40V
Diode Configuration:
-
Voltage - Forward(Vf@If):
900mV@3A
Current - Rectified:
1A
Mfr. Part #:
SM5819WS
Package:
SOD-323FL
Product Description
Product Overview
The SM5817WS-SM5819WS series are diodes designed for low voltage, high frequency inverters, free wheeling, and polarity protection applications. They offer reliable performance in demanding electronic circuits.
Product Attributes
- Brand: Shanghai Leiditech Electronic Co.,Ltd
- Origin: China (implied by company location)
- Marking: SM5817WS: SJ, SM5818WS: SK, SM5819WS: SL
Technical Specifications
| Parameter | Symbol | SM5817WS | SM5818WS | SM5819WS | Unit | Conditions |
| Non-Repetitive Peak reverse voltage | VRM | 20 | 30 | 40 | V | |
| Peak repetitive Peak reverse voltage Working Peak Reverse Voltage DC Blocking Voltage | VRRM VRWM VR | 20 30 40 | 20 30 40 | 20 30 40 | V | |
| RMS Reverse Voltage | VR(RMS) | 14 | 21 | 28 | V | |
| Average Rectified Output Current | IO | 1 | A | @TA=25 | ||
| Peak forward surge current | IFSM | 9 | A | @t=8.3ms | ||
| Repetitive Peak Forward Current | IFRM | 1.5 | A | |||
| Power Dissipation | Pd | 250 | mW | @TA=25 | ||
| Thermal Resistance Junction to Ambient | RJA | 500 | /W | |||
| Storage temperature | TSTG | -65~+150 | ||||
| Reverse breakdown voltage | V(BR) | 20 | 30 | 40 | V | IR= 1mA |
| Reverse voltage leakage current | IR | 1 | mA | VR = 20V (SM5817WS), VR = 30V (SM5818WS), VR = 40V (SM5819WS) | ||
| Forward voltage | VF | 0.45 | 0.55 | 0.6 | V | IF=1A |
| Forward voltage | VF | 0.75 | 0.875 | 0.9 | V | IF=3A |
| Diode capacitance | CD | 120 | pF | VR=4V, f=1MHz | ||
2106021033_Leiditech-SM5819WS_C2836940.pdf
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