Durable LGE KBJ25J Silicon Bridge Rectifier with 600V Maximum RMS Voltage and Surge Current Rating
Key Attributes
Model Number:
KBJ25J
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
350A
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - Forward(Vf@If):
1V@25A
Current - Rectified:
25A
Voltage - DC Reverse(Vr):
600V
Mfr. Part #:
KBJ25J
Package:
KBJ6
Product Description
Product Overview
The KBJ25A-KBJ25M series are silicon bridge rectifiers designed for high-reliability applications. They feature a rating up to 1000V PRV and a surge overload rating of 350 Amperes peak, making them ideal for printed circuit board mounting. Their reliable, low-cost construction utilizes a molded plastic technique, ensuring an inexpensive yet robust product. These rectifiers are lead solderable per MIL-STD-202 method 208.
Product Attributes
- Brand: LGE Semiconductor (implied by URL and email)
- Origin: Not specified
- Material: Molded plastic
- Color: Not specified
- Certifications: MIL-STD-202 method 208 (lead solderable)
Technical Specifications
| Characteristic | Symbol | KBJ25A | KBJ25B | KBJ25D | KBJ25G | KBJ25J | KBJ25K | KBJ25M | Units |
| Maximum recurrent peak reverse voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum RMS voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
| Maximum DC blocking voltage | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum average forward Output current @TA=25 | IF(AV) | 25.0 | A | ||||||
| Peak forward surge current 8.3ms single half-sine-wave superimposed on rated load | IFSM | 350.0 | A | ||||||
| Typical junction capacitance per element | CJ | 114 | pF | ||||||
| Typical thermal resistance | RJA | 22 | /W | ||||||
| Operating junction temperature range | TJ | -55 ---- +150 | |||||||
| Storage temperature range | TSTG | -55 ---- +150 | |||||||
| Maximum instantaneous forward voltage @12.5A | VF | 1.0 | V | ||||||
| Maximum reverse current @TA=25 at rated DC blocking voltage | IR | 5.0 | A | ||||||
| Maximum reverse current @TA=100 | IR | 0.5 | mA | ||||||
| It Rating for fusing @Tj=25 | It | 9508 | AS | ||||||
2409302201_LGE-KBJ25J_C6077534.pdf
Related Products
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
