Compact dual N channel MOSFET LGE 2N7002DW suitable for load switch applications and DC DC converters
Key Attributes
Model Number:
2N7002DW
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
115mA
RDS(on):
5Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Output Capacitance(Coss):
25pF
Input Capacitance(Ciss):
50pF
Pd - Power Dissipation:
150mW
Mfr. Part #:
2N7002DW
Package:
SOT-363
Product Description
Product Overview
The 2N7002DW is a dual N-channel MOSFET in a SOT-363 plastic-encapsulated package. It features a high-density cell design for low RDS(ON), making it suitable as a load switch for portable devices and a voltage-controlled small signal switch in DC/DC converters. This MOSFET is rugged, reliable, and offers high saturation current capability.
Product Attributes
- Brand: LGE Semiconductor (implied by URL)
- Origin: Not specified
- Material: Plastic (encapsulated)
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source voltage | VDS | 60 | V | |||
| Gate-Source voltage | VGS | ±20 | V | |||
| Drain Current | ID | 115 | mA | |||
| Power Dissipation | PD | (Ta=25) | 150 | mW | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55 | 150 | |||
| Thermal Resistance Junction to Ambient | RJA | 833 | /W | |||
| Drain-source breakdown voltage | V(BR)DSS | VGS=0 V, ID=250 A | 60 | V | ||
| Gate-threshold voltage | Vth(GS) | VDS=VGS, ID=250 A | 1 | 1.6 | 2.5 | V |
| Gate-body leakage | lGSS | VDS=0 V, VGS=±20 V | ±80 | nA | ||
| Zero gate voltage drain current | IDSS | VDS=60 V, VGS=0 V | 80 | nA | ||
| Drain-source on-resistance | RDS(on) | VGS=10 V, ID=500mA | 1.1 | 5 | ||
| VGS=5 V, ID=50mA | 1.2 | 7 | ||||
| Forward transconductance | gfs | VDS=10 V, ID=200mA | 80 | 500 | mS | |
| Drain-source on-voltage | VDS(on) | VGS=10V, ID=500mA | 0.5 | 3.75 | V | |
| VGS=5V, ID=50mA | 0.05 | 0.375 | ||||
| Diode forward voltage | VSD | IS=115mA, VGS=0 V | 0.55 | 1.2 | V | |
| Input capacitance | Ciss | VDS=25V, VGS=0V, f=1MHz | 50 | pF | ||
| Output capacitance | Coss | VDS=25V, VGS=0V, f=1MHz | 25 | |||
| Reverse transfer capacitance | Crss | VDS=25V, VGS=0V, f=1MHz | 5 | |||
| Switching Time | td(on) | VDD=25 V, RL=50 ID=500mA,VGEN=10V,G=25 | 20 | ns | ||
| td(off) | VDD=25 V, RL=50 ID=500mA,VGEN=10V,G=25 | 40 |
2410121617_LGE-2N7002DW_C27975286.pdf
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