Darlington transistor LRC LMBTA13LT1G with 1.8mW per degree Celsius thermal derating and RoHS compliance
Key Attributes
Model Number:
LMBTA13LT1G
Product Custom Attributes
Mfr. Part #:
LMBTA13LT1G
Package:
SOT-23
Product Description
Product Overview
The LESHAN RADIO COMPANY, LTD. LMBTA13LT1G and LMBTA14LT1G are Darlington amplifier transistors designed for various amplification applications. These transistors offer high DC current gain and are suitable for use in a wide range of electronic circuits.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Package Type: SOT-23
- Material Compliance: RoHS
- Special Feature (S- prefix): AEC-Q101 Qualified and PPAP Capable
Technical Specifications
| Characteristic | Symbol | LMBTA13 Min | LMBTA13 Max | LMBTA14 Min | LMBTA14 Max | Unit | Conditions |
| CollectorEmitter Voltage | V CES | 30 | 30 | Vdc | |||
| CollectorBase Voltage | V CBO | 30 | 30 | Vdc | |||
| EmitterBase Voltage | V EBO | 10 | 10 | Vdc | |||
| Collector Current Continuous | I C | 300 | 300 | mAdc | |||
| Total Device Dissipation (FR-5 Board) | P D | 225 | 225 | mW | TA = 25C | ||
| Derate above 25C (FR-5 Board) | 1.8 | 1.8 | mW/C | ||||
| Thermal Resistance, Junction to Ambient (FR-5 Board) | R JA | 556 | 556 | C/W | |||
| Total Device Dissipation (Alumina Substrate) | P D | 300 | 300 | mW | TA = 25C | ||
| Derate above 25C (Alumina Substrate) | 2.4 | 2.4 | mW/C | ||||
| Thermal Resistance, Junction to Ambient (Alumina Substrate) | R JA | 417 | 417 | C/W | |||
| Junction and Storage Temperature | T J , T stg | 55 | +150 | 55 | +150 | C | |
| CollectorEmitter Breakdown Voltage | V (BR)CEO | 30 | 30 | Vdc | I C = 100 Adc, V BE = 0 | ||
| Collector Cutoff Current | I CBO | 100 | 100 | nAdc | V CB = 30Vdc, I E = 0 | ||
| Emitter Cutoff Current | I EBO | 100 | 100 | nAdc | V EB = 10Vdc, I C = 0 | ||
| DC Current Gain | hFE | 5,000 | 10,000 | I C = 10 mAdc, V CE = 5.0 Vdc | |||
| DC Current Gain | hFE | 10,000 | 20,000 | I C = 100mAdc, V CE = 5.0Vdc | |||
| CollectorEmitter Saturation Voltage | VCE(sat) | 1.5 | 1.5 | Vdc | I C = 100 mAdc, I B = 0.1 mAdc | ||
| BaseEmitter On Voltage | V BE | 2.0 | 2.0 | Vdc | I C = 100mAdc, V CE = 5.0Vdc | ||
| Current GainBandwidth Product | fT | 125 | 125 | MHz | V CE = 5.0 Vdc, I C = 10mAdc, f = 100 MHz |
1810041221_LRC-LMBTA13LT1G_C79017.pdf
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