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quality Littelfuse IXYS DSA70C100HB Schottky Diode with Reduced Reverse Current and Improved Thermal Behavior factory
quality Littelfuse IXYS DSA70C100HB Schottky Diode with Reduced Reverse Current and Improved Thermal Behavior factory

Littelfuse IXYS DSA70C100HB Schottky Diode with Reduced Reverse Current and Improved Thermal Behavior

Key Attributes
Model Number: DSA70C100HB
Product Custom Attributes
Reverse Leakage Current (Ir):
680uA@100V
Non-Repetitive Peak Forward Surge Current:
550A
Voltage - DC Reverse (Vr) (Max):
100V
Operating Junction Temperature Range:
-55℃~+175℃
Diode Configuration:
1 Pair Common Cathode
Voltage - Forward(Vf@If):
740mV@35A
Current - Rectified:
35A
Mfr. Part #:
DSA70C100HB
Package:
TO-247AD
Product Description

Product Overview

The DSA70C100HB is a high-performance Schottky diode featuring low loss and soft recovery characteristics. Designed for demanding applications, this common cathode diode offers very low forward voltage (Vf), extremely low switching losses, and reduced reverse current (Irm) values. Its improved thermal behavior and high reliability contribute to efficient circuit operation with low voltage peaks, minimizing the need for extensive protection circuits and enabling low noise switching. It is ideal for use as rectifiers in switch mode power supplies (SMPS) and as free-wheeling diodes in low voltage converters.

Product Attributes

  • Brand: IXYS
  • Package: TO-247
  • Compliance: RoHS compliant
  • Material: Epoxy meets UL 94V-0

Technical Specifications

Symbol Definition Conditions Min. Typ. Max. Unit
Part Number DSA70C100HB
VRRM Max. repetitive reverse blocking voltage TJ = 25C 100 V
VRSM Max. non-repetitive reverse blocking voltage 100 V
IF(AV) Average forward current TC = 100C 70 A
IF Forward current TJ = 175C 70 A
VF Forward voltage drop IF = 70A, TJ = 175C 0.74 V
VF0 Threshold voltage TJ = 175C 0.45 V
rF Slope resistance for power loss calculation TJ = 175C 6 m
IR Reverse current VR = 100V, TJ = 25C 125 A
IR Reverse current VR = 100V, TJ = 175C 12.5 mA
Ptot Total power dissipation TC = 25C 160 W
RthJC Thermal resistance junction to case 0.74 K/W
RthCH Thermal resistance case to heatsink 0.3 K/W
CJ Junction capacitance VR = 12V, f = 1 MHz, TJ = 25C 406 pF
IFSM Max. forward surge current t = 10 ms; (50 Hz), sine; TJ = 45C 550 A
TJ Virtual junction temperature -55 175 C
Tstg Storage temperature -55 150 C
Weight 6 g
Mounting torque 1.2 Nm
Mounting force with clip 120 N

2411272350_Littelfuse-IXYS-DSA70C100HB_C19458495.pdf

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