Automotive Grade NPN Transistor S-LMUN5211T1G with SC70 Package and Halogen Free Material Compliance
Product Overview
The LMUN5211T1G and S-LMUN5211T1G are NPN Silicon Surface Mount Transistors with monolithic bias resistor networks, designed to simplify circuit design and reduce board space and component count. These devices are available in an SC-70/SOT-323 package, compatible with wave or reflow soldering. The modified gull-winged leads are engineered to absorb thermal stress during soldering, preventing die damage. The S- prefix variants are specifically for automotive and other applications requiring unique site and control change requirements, meeting AEC-Q101 qualification and PPAP capability. Both models comply with RoHS requirements and are Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Package Type: SC-70 (SOT-323)
- Material Compliance: RoHS, Halogen Free
- Automotive Qualification: AEC-Q101 qualified (S- prefix variants)
- Manufacturing Capability: PPAP capable (S- prefix variants)
Technical Specifications
| Parameter | Symbol | Model | R1(K) | R2(K) | Limits | Unit |
|---|---|---|---|---|---|---|
| Bias Resistor Transistor | LMUN5211T1G | 10 | 10 | |||
| Bias Resistor Transistor | S-LMUN5211T1G | 10 | 10 | |||
| CollectorEmitter Voltage | VCEO | 50 | V | |||
| CollectorBase Voltage | VCBO | 50 | V | |||
| Collector Current Continuous | IC | 100 | mA | |||
| Total Device Dissipation, FR-5 Board (@ TA = 25C) | PD | 618 | mW | |||
| Derate above 25C | 1.6 | mW/C | ||||
| JunctiontoAmbient Thermal Resistance (Note 1) | RJA | 202 | C/W | |||
| Junction and Storage Temperature | TJ,Tstg | -55 ~ +150 | C | |||
| CollectorEmitter Breakdown Voltage (IC = 2.0 mA, IB = 0) | VBR(CEO) | 50 | V | |||
| CollectorBase Breakdown Voltage (IC = 10 A, IE = 0) | VBR(CBO) | 50 | V | |||
| Collector-Base Cutoff Current (VCB = 50 V, IE = 0) | ICBO | - ~ 100 | nA | |||
| Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) | ICEO | - ~ 500 | nA | |||
| Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) | IEBO | - ~ 0.5 | mA | |||
| DC Current Gain (IC = 5.0 mA, VCE = 10 V) | HFE | 35 ~ 220 | ||||
| CollectorEmitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) | VCE(sat) | - ~ 0.25 | V | |||
| Input Resistor | R1 | 7 ~ 13 | K | |||
| Resistor Ratio | R1/R2 | 0.8 ~ 1.2 | ||||
| Shipping Parameter | LMUN5211T1G | 3000/Tape&Reel | ||||
| Shipping Parameter | LMUN5211T3G | 10000/Tape&Reel |
Note 1: FR-5 @ Minimum Pad.
Note 2: Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
2410010201_LRC-S-LMUN5211T1G_C5383041.pdf
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