Fast Recovery Epitaxial Diode Module Littelfuse IXYS MEE250-12DA with Isolation Voltage up to 3600 Volts
Product Overview
This series of Fast Recovery Epitaxial Diode (FRED) Modules, including models MEA 250-12DA, MEK 250-12DA, and MEE 250-12DA, offers high reliability circuit operation with a repetitive peak reverse voltage (VRRM) of 1200 V and an average forward current (IFAVM) of 260 A. Designed with a DCB ceramic base plate and planar passivated chips, these modules feature short recovery times, low switching losses, and soft recovery behavior. They are suitable for applications such as antiparallel diodes for high-frequency switching devices, free-wheeling diodes in converters and motor control circuits, inductive heating and melting, uninterruptible power supplies (UPS), and ultrasonic cleaners and welders. The design contributes to low voltage peaks for reduced protection circuits, low noise switching, and low losses.
Product Attributes
- Brand: IXYS
- Package Type: International standard package with DCB ceramic base plate
- Chip Technology: Planar passivated chips
- Certifications: UL registered E 72873
- Recovery Characteristics: Short recovery time, Soft recovery behaviour
- Isolation Voltage: 3600 V~
Technical Specifications
| Symbol | Test Conditions | Maximum Ratings | Characteristic Values (per diode) | Units |
|---|---|---|---|---|
| VRSM | 1200 | V | ||
| VRRM | 1200 | V | ||
| IFRMS | TC = 25 C | A | ||
| IFAVM | TC = 25 C; rectangular, d = 0.5 | A | ||
| IFRM | tP < 10 s; rep. rating, pulse width limited by TVJM | A | ||
| IFSM | TVJ = 45 C; t = 10 ms (50 Hz), sine | A | ||
| t = 8.3 ms (60 Hz), sine | A | |||
| TVJ = 150 C; t = 10 ms (50 Hz), sine | A | |||
| t = 8.3 ms (60 Hz), sine | A | |||
| I2t | TVJ = 45 C; t = 10 ms (50 Hz), sine | As | ||
| t = 8.3 ms (60 Hz), sine | As | |||
| TVJ = 150 C; t = 10 ms (50 Hz), sine | As | |||
| t = 8.3 ms (60 Hz), sine | As | |||
| TVJ | -40...+150 | C | ||
| Tstg | -40...+150 | C | ||
| TSmax | 125 | C | ||
| Ptot | Tc = 25 C | 110 | W | |
| VISOL | 50/60 Hz, RMS, t = 1 min | 3600 | V~ | |
| IISOL | t = 1 s | < 1 | mA | |
| Md | Mounting torque (M6) | 2.25-2.75 / 20-25 | Nm/lb.in | |
| Terminal connection torque (M6) | 4.50-5.50 / 40-48 | Nm/lb.in | ||
| dS | Creeping distance on surface | 150 | mm | |
| dA | Strike distance through air | 150 | mm | |
| a | Maximum allowable acceleration | 150 | m/s | |
| Weight | ~1.38 / ~1.69 | g | ||
| IR | TVJ = 25 C, VR = VRRM | typ. 0.228, max. 0.143 | mA | |
| TVJ = 25 C, VR = 0.8 VRRM | typ. 0.001, max. 0.01 | mA | ||
| TVJ = 125 C, VR = 0.8 VRRM | typ. 0.05, max. 0.10 | mA | ||
| VF | IF = 260 A; TVJ = 125 C | typ. 1.54, max. 1.80 | V | |
| TVJ = 25 C | typ. 1.16, max. 1.46 | V | ||
| IF = 260 A; TVJ = 125 C | typ. 1.38, max. 1.69 | V | ||
| TVJ = 25 C | typ. 1.16, max. 1.46 | V | ||
| VT0 | For power-loss calculations only | typ. 0.75 | V | |
| rT | typ. 0.00127 | |||
| RthJH | DC current | typ. 260 | K/W | |
| RthJC | DC current | typ. 1.54, max. 1.80 | K/W | |
| trr | IF = 260 A, TVJ = 100 C, VR = 600 V, -di/dt = 100 A/s | typ. 450 | ns | |
| IRM | VR= 600 V, TVJ = 25 C | typ. 12.7, max. 9.6 | A | |
| -di/dt = 100 A/s, TVJ = 100 C | typ. 12 | A | ||
| Qr | IF = 260 A, TVJ = 100 C, VR = 600 V, -di/dt = 100 A/s | typ. 75 | C | |
| tfr | IF = 300 A, TVJ = 125 C | typ. 0.05 | s | |
| ZthJH | Transient thermal impedance junction to heatsink | See Figure 7 | K/W |
Models: MEA 250-12DA, MEK 250-12DA, MEE 250-12DA
Dimensions: in mm (1 mm = 0.0394")
Note: Preliminary data. IFAVM rating includes reverse blocking losses at TVJM, VR = 0.6 VRRM, duty cycle d = 0.5. Data according to IEC 60747.
2409300703_Littelfuse-IXYS-MEE250-12DA_C499447.pdf
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