Durable Littelfuse IXYS DSEP15-06B Fast Recovery Diode with Very Short Recovery Time and Dissipation

Key Attributes
Model Number: DSEP15-06B
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
110A
Reverse Leakage Current (Ir):
100uA@600V
Reverse Recovery Time (trr):
25ns
Operating Junction Temperature Range:
-55℃~+175℃
Diode Configuration:
1 Independent
Voltage - DC Reverse (Vr) (Max):
600V
Pd - Power Dissipation:
95W
Voltage - Forward(Vf@If):
2.54V@15A
Current - Rectified:
15A
Mfr. Part #:
DSEP15-06B
Package:
TO-220-2
Product Description

Product Overview

The DSEP15-06B is a high-performance Fast Recovery Diode from IXYS, featuring low loss and soft recovery characteristics. Designed with planar passivated chips, it offers very low leakage current, very short recovery times, and improved thermal behavior with very low Irm-values. Its soft reverse recovery minimizes EMI/RFI, and low Irm reduces power dissipation and turn-on losses in commutating switches. This diode is ideal as an antiparallel diode for high-frequency switching devices, antisaturation diode, snubber diode, and free-wheeling diode. It is also suitable for rectifiers in switch mode power supplies (SMPS) and uninterruptible power supplies (UPS).

Product Attributes

  • Brand: IXYS
  • Technology: HiPerFRED (High Performance Fast Recovery Diode)
  • Chip Type: Planar passivated
  • Recovery Behavior: Very soft reverse recovery
  • Compliance: RoHS compliant
  • Flame Retardancy: Epoxy meets UL 94V-0

Technical Specifications

Part Number Description Ratings Conditions Unit Typical Maximum Minimum
DSEP15-06B Max. repetitive reverse blocking voltage VRRM TVJ = 25C V 600
Max. non-repetitive reverse blocking voltage VRSM TVJ = 25C V 600
Reverse current, drain current IR TVJ = 25C mA 0.5
Forward voltage drop VF IF = 15 A V 1.59 2.04
Forward voltage drop VF IF = 30 A V 2.54
Threshold voltage VF0 TVJ = 175C V 0.98
Slope resistance for power loss calculation only rF m 28
Total power dissipation Ptot TC = 25C W 130
Thermal resistance junction to case RthJC K/W 1.6
Max. forward surge current IFSM t = 10 ms; (50 Hz), sine; TVJ = 45C A 600
Average forward current IFAV d = rectangular 0.5 A 15
Junction capacitance CJ VR = 400 V; f = 1 MHz pF 150
Storage temperature Tstg C -55 150
Virtual junction temperature Tvj C -55 175

Package: TO-220

Dimensions (TO-220):

Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.32 4.82 0.170 0.190
A1 1.14 1.39 0.045 0.055
A2 2.29 2.79 0.090 0.110
b 0.64 1.01 0.025 0.040
b2 1.15 1.65 0.045 0.065
C 0.35 0.56 0.014 0.022
D 14.73 16.00 0.580 0.630
E 9.91 10.66 0.390 0.420
e 5.08 BSC 0.200 BSC
H1 5.85 6.85 0.230 0.270
L 12.70 13.97 0.500 0.550
L1 2.79 5.84 0.110 0.230
P 3.54 4.08 0.139 0.161
Q 2.54 3.18 0.100 0.125

2411220223_Littelfuse-IXYS-DSEP15-06B_C497164.pdf

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