Half Wave Silicon Controlled Rectifier Device Littelfuse MCR12NG Featuring 800 Volt Blocking Voltage
Key Attributes
Model Number:
MCR12NG
Product Custom Attributes
Holding Current (Ih):
40mA
Current - Gate Trigger(Igt):
20mA
Voltage - On State(Vtm):
2.2V
Current - On State(It(RMS)):
12A
Peak Off - State Voltage(Vdrm):
800V
SCR Type:
1 SCR
Gate Trigger Voltage (Vgt):
1V
Operating Temperature:
-40℃~+125℃
Mfr. Part #:
MCR12NG
Package:
TO-220AB
Product Description
Product Overview
The MCR12DG, MCR12MG, and MCR12NG are silicon controlled rectifiers designed for half-wave AC control applications. They offer blocking voltages up to 800V, an on-state current rating of 12 Amperes RMS at 80C, and high surge current capability. These devices feature a rugged TO-220AB package, glass-passivated junctions for reliability, and high immunity to dv/dt. They are ideal for motor controls, heating controls, power supplies, and other applications requiring half-wave silicon gate-controlled solid-state devices.
Product Attributes
- Brand: Littelfuse
- Material: Silicon
- Certifications: Pb-Free
- Package: TO-220AB
Technical Specifications
| Part Number | Symbol | Value | Unit | Description |
| MCR12DG | VDRM, VRRM | 400 | V | Peak Repetitive Off-State Voltage |
| VDRM, VRRM | 600 | V | Peak Repetitive Off-State Voltage | |
| VDRM, VRRM | 800 | V | Peak Repetitive Off-State Voltage | |
| MCR12MG | VDRM, VRRM | 400 | V | Peak Repetitive Off-State Voltage |
| VDRM, VRRM | 600 | V | Peak Repetitive Off-State Voltage | |
| VDRM, VRRM | 800 | V | Peak Repetitive Off-State Voltage | |
| MCR12NG | VDRM, VRRM | 400 | V | Peak Repetitive Off-State Voltage |
| VDRM, VRRM | 600 | V | Peak Repetitive Off-State Voltage | |
| VDRM, VRRM | 800 | V | Peak Repetitive Off-State Voltage | |
| All | IT (RMS) | 12 | A | On-State RMS Current (180 Conduction Angles; TC = 80C) |
| All | ITSM | 100 | A | Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125C) |
| All | I2t | 41 | Asec | Circuit Fusing Consideration (t = 8.3 ms) |
| All | PGM | 5.0 | W | Forward Peak Gate Power (Pulse Width 1.0 s, TC = 80C) |
| All | PG (AV) | 0.5 | W | Forward Average Gate Power (t = 8.3 ms, TC = 80C) |
| All | IT(AV) | 7.8 | A | Average On-State Current (180 Conduction Angles; TC = 80C) |
| All | IGM | 2.0 | A | Forward Peak Gate Current (Pulse Width 1.0 s, TC = 90C) |
| All | TJ | -40 to +125 | C | Operating Junction Temperature Range |
| All | Tstg | -40 to +150 | C | Storage Temperature Range |
| All | RJC | 2.2 | C/W | Thermal Resistance, Junction-to-Case (AC) |
| All | RJA | 62.5 | C/W | Thermal Resistance, Junction-to-Ambient |
| All | TL | 260 | C | Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds |
| All | IDRM, IRRM | 0.01 | mA | Peak Repetitive Forward or Reverse Blocking Current (TJ = 25C) |
| All | IDRM, IRRM | 2.0 | mA | Peak Repetitive Forward or Reverse Blocking Current (TJ = 125C) |
| All | VTM | 2.2 | V | Peak Forward On-State Voltage (ITM = 24 A) |
| All | IGT | 2.0 - 20 | mA | Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 ) |
| All | IH | 4.0 - 40 | mA | Holding Current (VD = 12 V, Initiating Current = 200 mA, Gate Open) |
| All | IL | 6.0 - 60 | mA | Latch Current (VD = 12 V, IG = 20 mA) |
| All | VGT | 0.5 - 1.0 | V | Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 100 ) |
| All | dv/dt | 100 - 250 | V/s | Critical Rate-of-Rise of Off-State Voltage (TJ = 125C) |
| All | di/dt | 50 | A/s | Repetitive Critical Rate of Rise of On-State Current |
2412021128_Littelfuse-MCR12NG_C17179875.pdf
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