Littelfuse IXYS CS19-12HO1 thyristor designed for line frequency power converters and motor control
Key Attributes
Model Number:
CS19-12HO1
Product Custom Attributes
Holding Current (Ih):
50mA
Current - Gate Trigger(Igt):
28mA
Voltage - On State(Vtm):
1.6V
Current - On State(It(RMS)):
29A
Peak Off - State Voltage(Vdrm):
1.2kV
SCR Type:
1 SCR
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.5V
Mfr. Part #:
CS19-12HO1
Package:
TO-220AB
Product Description
Product Overview
The CS19-08ho1 is a high-efficiency thyristor designed for line frequency applications. Featuring a planar passivated chip for long-term stability, it is suitable for a wide range of power control and conversion tasks including line rectifying, AC motor control, DC motor control, and power converters. The device comes in a standard TO-220 package and is RoHS compliant.
Product Attributes
- Brand: IXYS
- Package: TO-220
- Certifications: RoHS compliant, Epoxy meets UL 94V-0
Technical Specifications
| Symbol | Definition | Conditions | min. | typ. | max. | Unit |
| VDRM/VRRM | max. repetitive reverse/forward blocking voltage | 800 | V | |||
| IT(AV) | RMS current | 20 | A | |||
| It | value for fusing | t = 10 ms; (50 Hz), sine | 160 | As | ||
| It | value for fusing | t = 8,3 ms; (60 Hz), sine | 155 | As | ||
| VT | forward voltage drop | I = 20 A; T = 25C | 1.31 | 1.65 | V | |
| rT | slope resistance for power loss calculation only | I = 20 A; T = 25C | 22 | m | ||
| Ptot | total power dissipation | T = 25C | 170 | W | ||
| RthJC | thermal resistance junction to case | 0.7 | K/W | |||
| VGT | gate trigger voltage | I = 6 V; T = 25C | 0.86 | 1.5 | V | |
| IGT | gate trigger current | I = 6 V; T = 25C | 2.5 | 50 | mA | |
| IL | latching current | T = 25C | 75 | mA | ||
| IH | holding current | T = 25C | 50 | mA | ||
| tq | turn-off time | I = 20 A; V = VDRM; t = 200 s; non-repet. | 200 | s | ||
| ITSM | max. forward surge current | t = 10 ms; (50 Hz), sine | 180 | A | ||
| ITSM | max. forward surge current | t = 8,3 ms; (60 Hz), sine | 165 | A | ||
| PGM | max. gate power dissipation | t = 30 s; T = 125C | 5 | W | ||
| PGAV | average gate power dissipation | T = 125C | 0.5 | W | ||
| CJ | junction capacitance | V = 10 V; f = 1 MHz; T = 25C | 300 | pF | ||
| (dv/dt)cr | critical rate of rise of voltage | T = 150C; V = VDRM; method 1 (linear voltage rise) | 500 | V/s | ||
| (di/dt)cr | critical rate of rise of current | repetitive, I = 150 A; T = 150C; f = 50 Hz | 150 | A/s | ||
| TVJ | virtual junction temperature | -40 | 125 | C | ||
| Tstg | storage temperature | -40 | 150 | C |
2410121714_Littelfuse-IXYS-CS19-12HO1_C2985828.pdf
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