PNP Transistor LBSS5350SY3T1G Offering Wide Area of Safe Operation and Low Collector Emitter Voltage
Key Attributes
Model Number:
LBSS5350SY3T1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
550mW
Transition Frequency(fT):
150MHz
Type:
PNP
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LBSS5350SY3T1G
Package:
SOT-89
Product Description
Product Overview
The LBSS5350SY3T1G and S-LBSS5350SY3T1G are PNP bipolar junction transistors designed for general-purpose applications. They offer low collector-to-emitter saturation voltage, fast switching speeds, and large current capacity with a wide Area of Safe Operation (ASO). The S- prefix denotes automotive and other applications with unique site and control change requirements, with AEC-Q101 qualification and PPAP capability. These devices are RoHS compliant and Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS, Halogen Free
- Certifications: AEC-Q101 qualified (S- prefix models)
- Packaging: Tape & Reel (1000 units/reel)
Technical Specifications
| Parameter | Symbol | LBSS5350SY3T1G / S-LBSS5350SY3T1G | Unit | Conditions |
| CollectorEmitter Voltage | VCEO | -50 | V | |
| CollectorBase Voltage | VCBO | -60 | V | |
| EmitterBase Voltage | VEBO | -6 | V | |
| Collector Current | IC | -3 | A | |
| Collector Current (Pulse) | ICP | -6 | A | |
| Total Device Dissipation | PD | 550 | mW | FR-4 Board, Ta = 25C |
| Derate above 25C | 2.25 | mW/C | ||
| Thermal Resistance, JunctiontoAmbient | RJA | 4.4 | C/W | PCB Size:30.0mm25.0mm1.6mm,FR-4 Board |
| Junction and Storage temperature | TJ,Tstg | -55+150 | C | |
| Collector Cutoff Current | ICBO | -1 | A | VCB = -40 V, IE = 0 |
| Emitter Cut-off Current | IEBO | -1 | A | VEB =-4V, IC =0 |
| DC Current Gain | HFE | 200 - 400 | VCE =-2V, IC =-100mA | |
| DC Current Gain | HFE | 35 - | VCE =-2V, IC =-3A | |
| CollectorEmitter Saturation Voltage | VCE(sat) | -0.35 to -0.7 | V | IC =-2A, IB =-100mA |
| Base-Emitter saturation voltage | VBE(sat) | -0.94 to -1.2 | V | IC =-2A, IB =-100mA |
| Transition Frequency | fT | 150 | MHz | VCE =-10V, IC =-50mA |
| Collector Output Capacitance | Cob | 39 | pF | VCB =-10V, f=1MHz |
2201121200_LRC-LBSS5350SY3T1G_C2905404.pdf
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