NPN Middle Power Transistor LBSS4250Y3T1G for Motor and LED Driver Applications Featuring Low VCEsat
Key Attributes
Model Number:
LBSS4250Y3T1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
550mW
Transition Frequency(fT):
360MHz
Type:
NPN
Current - Collector(Ic):
2A
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LBSS4250Y3T1G
Package:
SOT-89
Product Description
Product Overview
The LBSS4250Y3T1G and S-LBSS4250Y3T1G are NPN middle power transistors designed for middle power driver applications. They offer complementary PNP types, low VCE(sat), and are suitable for motor drivers and LED drivers. The S-prefix variant is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications with unique site and control change requirements. The material complies with RoHS requirements and is Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS, Halogen Free
- Certifications: AEC-Q101 qualified and PPAP capable (S-prefix only)
Technical Specifications
| Model | Type | Voltage (VCEO/VCBO/VEBO) | Current (IC/ICP) | VCE(sat) (Typ.) | fT (Typ.) | Cob (Typ.) |
|---|---|---|---|---|---|---|
| LBSS4250Y3T1G | NPN Middle Power Transistor | 50V / 50V / 6V | 2.0A / 4A | 0.35V (at IC=700mA, IB=35mA) | 360 MHz (at VCE=10V, IE=-300mA, f=100 MHz) | 12 pF (at VCB=10V, IE=0A, f=1 MHz) |
| S-LBSS4250Y3T1G | NPN Middle Power Transistor (Automotive) | 50V / 50V / 6V | 2.0A / 4A | 0.35V (at IC=700mA, IB=35mA) | 360 MHz (at VCE=10V, IE=-300mA, f=100 MHz) | 12 pF (at VCB=10V, IE=0A, f=1 MHz) |
2404121426_LRC-LBSS4250Y3T1G_C5273343.pdf
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