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quality Littelfuse IXYS DSA30C200PB Schottky Diode with Reduced Reverse Current and Improved Thermal Behavior factory
quality Littelfuse IXYS DSA30C200PB Schottky Diode with Reduced Reverse Current and Improved Thermal Behavior factory

Littelfuse IXYS DSA30C200PB Schottky Diode with Reduced Reverse Current and Improved Thermal Behavior

Key Attributes
Model Number: DSA30C200PB
Product Custom Attributes
Reverse Leakage Current (Ir):
250uA@200V
Voltage - DC Reverse (Vr) (Max):
200V
Diode Configuration:
1 Pair Common Cathode
Voltage - Forward(Vf@If):
1.1V@30A
Current - Rectified:
15A
Mfr. Part #:
DSA30C200PB
Package:
TO-220-3
Product Description

Product Overview

The DSA30C200PB is a high-performance Schottky diode featuring low loss and soft recovery characteristics. Designed with a common cathode configuration, this diode offers very low forward voltage (Vf), extremely low switching losses, and reduced reverse current (Irm) values. Its improved thermal behavior and high reliability contribute to efficient circuit operation, minimizing voltage peaks and reducing the need for extensive protection circuits. The DSA30C200PB is ideal for rectifiers in switch mode power supplies (SMPS) and as a free-wheeling diode in low voltage converters.

Product Attributes

  • Brand: IXYS
  • Package: TO-220
  • Compliance: RoHS compliant
  • Material: Epoxy meets UL 94V-0

Technical Specifications

Part Number Description VRRM (V) IF(AV) (A) VF (V) Package Type Ordering Number Marking on Product
DSA30C200PB Low Loss and Soft Recovery High Performance Schottky Diode, Common Cathode 200 30 0.78 (typ.) TO-220AB DSA30C200PB DSA30C200PB
DSA30C200PC Schottky Diode, low VF, Common Cathode 200 - - TO-263AB (D2Pak) - -
DSA30C200IB Schottky Diode, low VF, Common Cathode 200 - - TO-262 (I2Pak) - -

Technical Data (DSA30C200PB)

V A V V m pF A W g
Symbol Definition Conditions Unit typ. max. min.
VRRM Repetitive reverse blocking voltage Tj = 25C 200
IF(AV) Average forward current TC = 25C 30
VF Forward voltage drop IF = 15 A, Tj = 25C 0.78 0.95
VF0 Threshold voltage Tj = 175C 0.53
rF Slope resistance Tj = 175C 10.8
IR Reverse current VR = 200 V, Tj = 25C A 125
CJ Junction capacitance VJ = 100 V, f = 1 MHz, Tj = 25C 47
IFSM Max. forward surge current t = 10 ms; (50 Hz), sine; Tj = 45C 320
thJC Thermal resistance junction to case K/W 1.75
thCH Thermal resistance case to heatsink K/W 0.50
Ptot Total power dissipation TC = 25C 155
TVJ Virtual junction temperature C 175
Tstg Storage temperature C -55 150
Weight 0.50

Dimensions (TO-220)

Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.32 4.82 0.170 0.190
A1 1.14 1.39 0.045 0.055
A2 2.29 2.79 0.090 0.110
b 0.64 1.01 0.025 0.040
b2 1.15 1.65 0.045 0.065
C 0.35 0.56 0.014 0.022
D 14.73 16.00 0.580 0.630
E 9.91 10.66 0.390 0.420
e 2.54 BSC 0.100 BSC
H1 5.85 6.85 0.230 0.270
L 12.70 13.97 0.500 0.550
L1 2.79 5.84 0.110 0.230
P 3.54 4.08 0.139 0.161
Q 2.54 3.18 0.100 0.125

2411271946_Littelfuse-IXYS-DSA30C200PB_C515603.pdf

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