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quality Electronic transistor luJing BC857B PNP plastic encapsulated SOT 23 package suitable for low current factory
quality Electronic transistor luJing BC857B PNP plastic encapsulated SOT 23 package suitable for low current factory

Electronic transistor luJing BC857B PNP plastic encapsulated SOT 23 package suitable for low current

Key Attributes
Model Number: BC857B
Product Custom Attributes
Mfr. Part #:
BC857B
Package:
SOT-23
Product Description

Product Overview

The BC856/BC857/BC858 series are PNP general-purpose transistors in a SOT-23 plastic-encapsulated package. They are designed for low current applications with a maximum rating of 100 mA. These transistors offer a versatile solution for various electronic circuits.

Product Attributes

  • Brand: Lujing Semiconductor (implied by URL)
  • Origin: China (implied by URL)
  • Material: Plastic Encapsulate
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

ParameterSymbolBC856BC857BC858UnitTest Conditions
Collector-base voltageVCBO-80-50-30V
Collector-emitter voltageVCEO-65-45-30V
Emitter-base voltageVEBO-5-5-5V
Collector currentIC-100-100-100mA
Peak collector currentICM-200-200-200mA
Peak base currentIBM-200-200-200mA
Total power dissipationPtot250250250mW* Transistor mounted on an FR4 printed-circuit board, standard footprint.
Junction temperatureTj150150150C
Storage temperatureTstg-65 to +150-65 to +150-65 to +150C
Operating ambient temperatureRamb-65 to +150-65 to +150-65 to +150C
Thermal resistance from junction to ambientRth j-a500500500K/W* Transistor mounted on an FR4 printed-circuit board, standard footprint.
Collector cutoff currentICBO-1 to -15-1 to -15-1 to -15nAVCB = -30 V, IE = 0
Collector cutoff currentICBO-4-4-4AVCB = -30 V, IE = 0 , Tj = 150
Emitter cutoff currentIEBO-100-100-100nAVEB = -5 V, IC = 0
DC current gainhFE125 to 475125 to 800IC = -2 mA; VCE = -5 V
DC current gain (BC856A,BC857A)hFE125 to 250125 to 250IC = -2 mA; VCE = -5 V
DC current gain (BC856B,BC857B,BC858B)hFE220 to 475220 to 475220 to 475IC = -2 mA; VCE = -5 V
DC current gain (BC857C)hFE420 to 800IC = -2 mA; VCE = -5 V
Collector-emitter saturation voltageVCE(sat)-75 to -300-75 to -300-250 to -650mVIC = -10 mA; IB = -0.5 mA
Base-emitter saturation voltageVBE(sat)-700-700-850mVIC = -10 mA; IB = -0.5 mA
Base-emitter voltageVBE-600 to -650-600 to -650-750mVIC = -2 mA; VCE = -5 V
Base-emitter voltageVBE-820-820-820mVIC = -10 mA; VCE = -5 V
Collector capacitanceCC4.54.54.5pFVCB = -10 V; IE = Ie = 0;f = 1 MHz
Transition frequencyfT100100100MHzVCE = -5 V; IC = -10 mA;f = 100 MHz
Noise figureNF2 to 102 to 102 to 10dB

2512021845_luJing-BC857B_C53058844.pdf

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