fast recovery diode Littelfuse IXYS DSEP29-06B with low leakage current and soft recovery characteristics

Key Attributes
Model Number: DSEP29-06B
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
250A
Reverse Leakage Current (Ir):
250uA@600V
Reverse Recovery Time (trr):
25ns
Operating Junction Temperature Range:
-55℃~+175℃
Diode Configuration:
1 Independent
Voltage - DC Reverse (Vr) (Max):
600V
Pd - Power Dissipation:
165W
Voltage - Forward(Vf@If):
3.22V@60A
Current - Rectified:
30A
Mfr. Part #:
DSEP29-06B
Package:
TO-220-2
Product Description

Product Overview

The DSEP29-06B is a high-performance, fast recovery diode from IXYS, featuring low loss and soft recovery characteristics. Designed with planar passivated chips, it offers very low leakage current, very short recovery times, and improved thermal behavior. Its soft reverse recovery minimizes EMI/RFI, and low Irm values reduce power dissipation and turn-on losses in commutating switches. This diode is ideal as an antiparallel diode for high-frequency switching devices, antisaturation diode, snubber diode, and free-wheeling diode, as well as for rectifiers in switch mode power supplies (SMPS) and uninterruptible power supplies (UPS).

Product Attributes

  • Brand: IXYS
  • Package: TO-220 (Industry standard outline)
  • Certifications: RoHS compliant, Epoxy meets UL 94V-0
  • Data Standard: According to IEC 60747

Technical Specifications

Symbol Definition Conditions Unit min. typ. max.
VRRM max. repetitive reverse blocking voltage TVJ = 25C V 600
VRMSM max. non-repetitive reverse blocking voltage TVJ = 25C V 600
VRSM max. non-repetitive reverse blocking voltage TVJ = 25C V 600
IF(AV) average forward current TC = 100C A 30
IFSM max. forward surge current t = 10 ms; (50 Hz), sine; TVJ = 45C A 250
VF forward voltage drop IF = 60 A; TVJ = 25C V 1.63
VF0 threshold voltage TVJ = 25C V 0.84
rF slope resistance for power loss calculation only TVJ = 175C m 20
IR reverse current, drain current VR = 600 V; TVJ = 25C A 150
IR reverse current, drain current VR = 600 V; TVJ = 175C mA 2.27
CJ junction capacitance VJ = 400 V; f = 1 MHz pF 26
Ptot total power dissipation TC = 25C W 165
RthJC thermal resistance junction to case K/W 0.50
RthCH thermal resistance case to heatsink K/W 0.50
TVJ virtual junction temperature C -55 175
Tstg storage temperature C -55 150
trr reverse recovery time IF = 30 A; -diF/dt = 200 A/s; VR = 300 V; TVJ = 100C ns 70
tfr reverse recovery time IF = 30 A; -diF/dt = 200 A/s; VR = 300 V; TVJ = 100C s 0.50
IRM max. reverse recovery current IF = 30 A; -diF/dt = 200 A/s; VR = 300 V; TVJ = 100C A 4.5
Qr reverse recovery charge IF = 30 A; -diF/dt = 200 A/s; VR = 300 V; TVJ = 100C C 100

Dimensions (TO-220)

Dim Millimeter Inches
Min. Max. Min. Max.
A 4.32 4.82 0.170 0.190
A1 1.14 1.39 0.045 0.055
A2 2.29 2.79 0.090 0.110
b 0.64 1.01 0.025 0.040
b2 1.15 1.65 0.045 0.065
C 0.35 0.56 0.014 0.022
D 14.73 16.00 0.580 0.630
E 9.91 10.66 0.390 0.420
e 5.08 BSC 0.200 BSC
H1 5.85 6.85 0.230 0.270
L 12.70 13.97 0.500 0.550
L1 2.79 5.84 0.110 0.230
P 3.54 4.08 0.139 0.161
Q 2.54 3.18 0.100 0.125

Weight: 2 g

Mounting Torque: 0.4 - 0.6 Nm

Mounting Force (with clip): 20 - 60 N

RMS Current per terminal: 35 A


2410121742_Littelfuse-IXYS-DSEP29-06B_C426667.pdf

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