Surface Mount Dual Bias Resistor Transistors LRC S-LMUN5314DW1T1G NPN and PNP Automotive Applications
Product Overview
The LMUN5314DW1T1G and S-LMUN5314DW1T1G are dual bias resistor NPN and PNP silicon surface mount transistors featuring monolithic bias resistor networks. These devices simplify circuit design, reduce board space, and decrease component count. The 'S-' prefix variants are AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications with stringent control change requirements. Both models are RoHS compliant and Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Product Type: Dual Bias Resistor Transistors (NPN and PNP)
- Mounting Type: Surface Mount
- Material Compliance: RoHS, Halogen Free
- Qualification: AEC-Q101 qualified and PPAP capable (for S- prefix models)
- Package: SC88 (SOT-363)
Technical Specifications
| Parameter | Model | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings (Ta = 25C) | ||||||
| Collector-Base Voltage | VCBO | 50 | V | |||
| Collector Current Continuous | IC | 100 | mA | |||
| Collector-Emitter Voltage | VCEO | 50 | V | |||
| Total Device Dissipation (Note 1) | PD | 250 | mW | |||
| Derate above 25C | 2 | mW/C | ||||
| Thermal Resistance, Junction-to-Ambient (Note 1) | RJA | 493 | C/W | |||
| Thermal Resistance, Junction-to-Lead (Note 1) | RJL | 188 | C/W | |||
| Junction and Storage Temperature | TJ, Tstg | -55 | +150 | C | ||
| Electrical Characteristics (Ta = 25C) | ||||||
| Collector-Emitter Breakdown Voltage | VBR(CEO) | 50 | - | - | V | |
| Collector-Base Breakdown Voltage | VBR(CBO) | 50 | - | - | V | |
| Collector-Base Cutoff Current | ICBO | - | - | 100 | nA | |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nA | |
| Emitter-Base Cutoff Current | IEBO | - | - | 0.2 | A | |
| DC Current Gain | HFE | 80 | - | 140 | ||
| CollectorEmitter Saturation Voltage | VCE(sat) | - | - | 0.25 | V | |
| Output Voltage (on) | VOL | - | - | 0.25 | V | |
| Output Voltage (off) | VOH | - | - | 1.5 | V | |
| Input Resistor R1 | R1 | 7 | 10 | 13 | K | |
| Resistor Ratio R1/R2 | R1/R2 | 0.17 | 0.21 | 0.25 | ||
| On-State Input Voltage (NPN) | VI(on) | 2 | - | - | V | |
| Off-State Input Voltage (NPN) | VI(off) | - | - | 0.5 | V | |
| On-State Input Voltage (PNP) | VI(on) | -2 | - | - | V | |
| Off-State Input Voltage (PNP) | VI(off) | - | - | -0.5 | V | |
| Resistor Values | ||||||
| R1 (K) | LMUN5314DW1T1G | 10 | ||||
| R2 (K) | LMUN5314DW1T1G | 47 | ||||
| R1 (K) | LMUN5314DW1T1G | 10 | ||||
| R2 (K) | LMUN5314DW1T1G | 47 | ||||
| Device Marking | ||||||
| LMUN5314DW1T1G | 14 | |||||
| Shipping | ||||||
| 3000/Tape&Reel | ||||||
| 10000/Tape&Reel | ||||||
2303140930_LRC-S-LMUN5314DW1T1G_C5368882.pdf
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