Surface Mount Dual Bias Resistor Transistors LRC S-LMUN5314DW1T1G NPN and PNP Automotive Applications

Key Attributes
Model Number: S-LMUN5314DW1T1G
Product Custom Attributes
Output Voltage(VO(on)):
200mV
Input Resistor:
10kΩ
Resistor Ratio:
0.25
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
S-LMUN5314DW1T1G
Package:
SOT-363
Product Description

Product Overview

The LMUN5314DW1T1G and S-LMUN5314DW1T1G are dual bias resistor NPN and PNP silicon surface mount transistors featuring monolithic bias resistor networks. These devices simplify circuit design, reduce board space, and decrease component count. The 'S-' prefix variants are AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications with stringent control change requirements. Both models are RoHS compliant and Halogen Free.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Product Type: Dual Bias Resistor Transistors (NPN and PNP)
  • Mounting Type: Surface Mount
  • Material Compliance: RoHS, Halogen Free
  • Qualification: AEC-Q101 qualified and PPAP capable (for S- prefix models)
  • Package: SC88 (SOT-363)

Technical Specifications

Parameter Model Symbol Min. Typ. Max. Unit
Maximum Ratings (Ta = 25C)
Collector-Base Voltage VCBO 50 V
Collector Current Continuous IC 100 mA
Collector-Emitter Voltage VCEO 50 V
Total Device Dissipation (Note 1) PD 250 mW
Derate above 25C 2 mW/C
Thermal Resistance, Junction-to-Ambient (Note 1) RJA 493 C/W
Thermal Resistance, Junction-to-Lead (Note 1) RJL 188 C/W
Junction and Storage Temperature TJ, Tstg -55 +150 C
Electrical Characteristics (Ta = 25C)
Collector-Emitter Breakdown Voltage VBR(CEO) 50 - - V
Collector-Base Breakdown Voltage VBR(CBO) 50 - - V
Collector-Base Cutoff Current ICBO - - 100 nA
Collector-Emitter Cutoff Current ICEO - - 500 nA
Emitter-Base Cutoff Current IEBO - - 0.2 A
DC Current Gain HFE 80 - 140
CollectorEmitter Saturation Voltage VCE(sat) - - 0.25 V
Output Voltage (on) VOL - - 0.25 V
Output Voltage (off) VOH - - 1.5 V
Input Resistor R1 R1 7 10 13 K
Resistor Ratio R1/R2 R1/R2 0.17 0.21 0.25
On-State Input Voltage (NPN) VI(on) 2 - - V
Off-State Input Voltage (NPN) VI(off) - - 0.5 V
On-State Input Voltage (PNP) VI(on) -2 - - V
Off-State Input Voltage (PNP) VI(off) - - -0.5 V
Resistor Values
R1 (K) LMUN5314DW1T1G 10
R2 (K) LMUN5314DW1T1G 47
R1 (K) LMUN5314DW1T1G 10
R2 (K) LMUN5314DW1T1G 47
Device Marking
LMUN5314DW1T1G 14
Shipping
3000/Tape&Reel
10000/Tape&Reel

2303140930_LRC-S-LMUN5314DW1T1G_C5368882.pdf

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