Digital Transistor Featuring Integrated Base Resistors LRC LMUN2134LT1G Suitable for Applications
Key Attributes
Model Number:
LMUN2134LT1G
Product Custom Attributes
Output Voltage(VO(on)):
-
Input Resistor:
28.6kΩ
Resistor Ratio:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
LMUN2134LT1G
Package:
SOT-23
Product Description
Product Overview
The LMUN2111LT1G Series are PNP Silicon Surface Mount Transistors featuring a monolithic bias resistor network (BRT). These digital transistors integrate a single transistor with a series base resistor and a base-emitter resistor, eliminating the need for external components. This integration simplifies circuit design, reduces board space, and lowers component count. Housed in a SOT-23 package designed for low power surface mount applications, they are suitable for wave or reflow soldering, with modified gull-winged leads absorbing thermal stress. The devices are available in 8 mm embossed tape and reel packaging.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Material: PNP Silicon
- Package: SOT-23
- Compliance: RoHS requirements
Technical Specifications
| Model | Device Marking | R1 (k) | R2 (k) | Shipping (7 inch/3000 unit reel) | Shipping (13 inch/10,000 unit reel) |
|---|---|---|---|---|---|
| LMUN2111LT1G | A6A | 10 | 10 | 3000/Tape & Reel | 10,000/Tape & Reel |
| LMUN2110LT1G | A6O | 47 | 8 | 3000/Tape & Reel | 10,000/Tape & Reel |
| LMUN2112LT1G | A6B | 22 | 22 | 3000/Tape & Reel | 10,000/Tape & Reel |
| LMUN2113LT1G | A6C | 47 | 47 | 3000/Tape & Reel | 10,000/Tape & Reel |
| LMUN2114LT1G | A6D | 10 | 47 | 3000/Tape & Reel | 10,000/Tape & Reel |
| LMUN2115LT1G (Note 3.) | A6E | 10 | 8 | 3000/Tape & Reel | 10,000/Tape & Reel |
| LMUN2116LT1G (Note 3.) | A6F | 4.7 | 8 | 3000/Tape & Reel | 10,000/Tape & Reel |
| LMUN2130LT1G (Note 3.) | A6G | 1.0 | 1.0 | 3000/Tape & Reel | 10,000/Tape & Reel |
| LMUN2131LT1G (Note 3.) | A6H | 2.2 | 2.2 | 3000/Tape & Reel | 10,000/Tape & Reel |
| LMUN2132LT1G (Note 3.) | A6J | 4.7 | 4.7 | 3000/Tape & Reel | 10,000/Tape & Reel |
| LMUN2133LT1G (Note 3.) | A6K | 4.7 | 47 | 3000/Tape & Reel | 10,000/Tape & Reel |
| LMUN2134LT1G (Note 3.) | A6L | 22 | 47 | 3000/Tape & Reel | 10,000/Tape & Reel |
| Characteristic | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| MAXIMUM RATINGS (TA = 25C unless otherwise noted) | ||||
| Collector-Base Voltage | VCBO | 50 | Vdc | |
| Collector-Emitter Voltage | VCEO | 50 | Vdc | |
| Collector Current | IC | 100 | mAdc | |
| THERMAL CHARACTERISTICS | ||||
| Total Device Dissipation TA = 25C | PD | 246 (Note 1.) 400 (Note 2.) | mW | |
| Derate above 25C | 1.5 (Note 1.) 2.0 (Note 2.) | C/W | ||
| Thermal Resistance Junction-to-Ambient | RJA | 508 (Note 1.) 311 (Note 2.) | C/W | |
| Thermal Resistance Junction-to-Lead | RJL | 174 (Note 1.) 208 (Note 2.) | C/W | |
| Junction and Storage Temperature Range | TJ, Tstg | 55 to +150 | C | |
| OFF CHARACTERISTICS (TA = 25C unless otherwise noted) | ||||
| Collector-Base Cutoff Current (VCB = 50 V, IE = 0) | ICBO | 100 nAdc | ||
| Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) | ICEO | 500 nAdc | ||
| Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) | IEBO | 0.5 | mAdc | For LMUN2111LT1G, LMUN2112LT1G, LMUN2113LT1G, LMUN2114LT1G, LMUN2115LT1G, LMUN2116LT1G, LMUN2130LT1G, LMUN2131LT1G, LMUN2132LT1G, LMUN2133LT1G, LMUN2110LT1G, LMUN2134LT1G |
| Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) | V(BR)CBO | 50 | Vdc | |
| Collector-Emitter Breakdown Voltage (Note 4.) (IC = 2.0 mA, IB = 0) | V(BR)CEO | 50 | Vdc | |
| ON CHARACTERISTICS (Note 5.) (TA = 25C unless otherwise noted) | ||||
| DC Current Gain (V CE = 10 V, IC = 5.0 mA ) | hFE | 35 to 160 (Model Dependent) | See table for specific values | |
| Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) | VCE(sat) | 0.25 Vdc | For LMUN2110LT1G | |
| Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 5 mA) | VCE(sat) | 0.25 Vdc | For LMUN2130LT1G/LMUN2131LT1G | |
| Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 1 mA) | VCE(sat) | 0.25 Vdc | For LMUN2115LT1G/LMUN2116LT1G/ LMUN2132LT1G/LMUN2133LT1G/LMUN2134LT1G | |
| Output Voltage (on) (V CC = 5.0 V, VB = 2.5 V, RL = 1.0 k ) | VOL | 0.2 | Vdc | For LMUN2111LT1G, LMUN2112LT1G, LMUN2114LT1G, LMUN2114LT1G, LMUN2115LT1G, LMUN2116LT1G, LMUN2130LT1G, LMUN2131LT1G, LMUN2132LT1G, LMUN2133LT1G, LMUN2134LT1G |
| Output Voltage (on) (V CC = 5.0 V, VB = 3.5 V, RL = 1.0 k ) | VOL | 0.2 | Vdc | For LMUN2113LT1G |
| Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k ) | VOH | 4.9 | Vdc | For LMUN2115LT1G, LMUN2116LT1G, LMUN2131LT1G, LMUN2132LT1G |
| Output Voltage (off) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k ) | VOH | 4.9 | Vdc | For LMUN2130LT1G |
| Input Resistor R1 | R1 | 0.7 to 61.1 (Model Dependent) | k | See table for specific values |
| Resistor Ratio R1/R2 | R1/R2 | 0.055 to 1.2 (Model Dependent) | See table for specific values | |
Notes:
- Note 1: FR4 @ Minimum Pad
- Note 2: FR4 @ 1.0 x 1.0 inch Pad
- Note 3: New devices. Updated curves to follow in subsequent data sheets.
- Note 4: Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
- Note 5: Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
2409302331_LRC-LMUN2134LT1G_C5273253.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
Zener diode YANGJIE BZX584B15VQ with 15 volt Zener voltage and 2 percent tolerance in compact SOD523 package
Product OverviewThe BZX584B3V6Q thru BZX584B36VQ series are small signal Zener diodes designed for general regulation functions. They feature an epoxy case that meets UL-94 V-0 flammability rating and is halogen-free, with Moisture Sensitivity Level 1. These diodes offer Zener voltages ranging from ...
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
