Surface Mount NPN Silicon Transistor LRC LDTC114TET1G SC-89 Package Ideal for Compact Circuit Designs
Product Overview
The Leshan Radio Company, Ltd. BRT (Bias Resistor Transistor) series offers NPN silicon surface mount transistors with integrated monolithic bias resistor networks. These devices are designed to replace single transistors and their external bias resistor networks, simplifying circuit design, reducing board space, and lowering component count. Housed in the SC-89 package, they are suitable for low-power surface mount applications and can be soldered using wave or reflow methods. The modified gull-winged leads are designed to absorb thermal stress during soldering, preventing die damage. This series is RoHS compliant and the S- prefix variants are AEC-Q101 qualified and PPAP capable for automotive and other demanding applications.
Product Attributes
- Brand: Leshan Radio Company, Ltd.
- Package Type: SC-89
- Transistor Type: NPN Silicon
- Mounting Type: Surface Mount
- Compliance: RoHS
- Special Variants: S- prefix for AEC-Q101 Qualified and PPAP Capable applications
Technical Specifications
| Model | Device Marking | R1 (K) | R2 (K) | Package | Shipping Quantity | Collector-Base Voltage (VCBO) | Collector-Emitter Voltage (VCEO) | Collector Current (IC) | Total Device Dissipation (PD) on FR-4 Board (Note 1) | Thermal Resistance (RJA) on FR-4 Board (Note 1) | Total Device Dissipation (PD) on FR-4 Board (Note 2) | Thermal Resistance (RJA) on FR-4 Board (Note 2) | Junction and Storage Temperature Range (TJ, Tstg) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| LDTC114EET1G | 8A | 10 | 10 | SC-89 | 3000 (Tape & Reel) | 50 Vdc | 50 Vdc | 100 mAdc | 200 mW @ 25C | 600 C/W | 300 mW @ 25C | 400 C/W | -55 to +150 C | |
| LDTC124EET1G | 8B | 22 | 22 | SC-89 | 3000 (Tape & Reel) | 50 Vdc | 50 Vdc | 100 mAdc | 200 mW @ 25C | 600 C/W | 300 mW @ 25C | 400 C/W | -55 to +150 C | |
| LDTC144EET1G | 8C | 47 | 47 | SC-89 | 3000 (Tape & Reel) | 50 Vdc | 50 Vdc | 100 mAdc | 200 mW @ 25C | 600 C/W | 300 mW @ 25C | 400 C/W | -55 to +150 C | |
| LDTC114YET1G | 8D | 10 | 47 | SC-89 | 3000 (Tape & Reel) | 50 Vdc | 50 Vdc | 100 mAdc | 200 mW @ 25C | 600 C/W | 300 mW @ 25C | 400 C/W | -55 to +150 C | |
| LDTC114TET1G | 94 | 10 | SC-89 | 3000 (Tape & Reel) | 50 Vdc | 50 Vdc | 100 mAdc | 200 mW @ 25C | 600 C/W | 300 mW @ 25C | 400 C/W | -55 to +150 C | ||
| LDTC143TET1G | 8F | 4.7 | SC-89 | 3000 (Tape & Reel) | 50 Vdc | 50 Vdc | 100 mAdc | 200 mW @ 25C | 600 C/W | 300 mW @ 25C | 400 C/W | -55 to +150 C | ||
| LDTC123EET1G | 8H | 2.2 | 2.2 | SC-89 | 3000 (Tape & Reel) | 50 Vdc | 50 Vdc | 100 mAdc | 200 mW @ 25C | 600 C/W | 300 mW @ 25C | 400 C/W | -55 to +150 C | |
| LDTC143EET1G | 8J | 4.7 | 4.7 | SC-89 | 3000 (Tape & Reel) | 50 Vdc | 50 Vdc | 100 mAdc | 200 mW @ 25C | 600 C/W | 300 mW @ 25C | 400 C/W | -55 to +150 C | |
| LDTC143ZET1G | 8K | 4.7 | 47 | SC-89 | 3000 (Tape & Reel) | 50 Vdc | 50 Vdc | 100 mAdc | 200 mW @ 25C | 600 C/W | 300 mW @ 25C | 400 C/W | -55 to +150 C | |
| LDTC124XET1G | 8L | 22 | 47 | SC-89 | 3000 (Tape & Reel) | 50 Vdc | 50 Vdc | 100 mAdc | 200 mW @ 25C | 600 C/W | 300 mW @ 25C | 400 C/W | -55 to +150 C | |
| LDTC123JET1G | 8M | 2.2 | 47 | SC-89 | 3000 (Tape & Reel) | 50 Vdc | 50 Vdc | 100 mAdc | 200 mW @ 25C | 600 C/W | 300 mW @ 25C | 400 C/W | -55 to +150 C | |
| LDTC115EET1G | 8N | 100 | 100 | SC-89 | 3000 (Tape & Reel) | 50 Vdc | 50 Vdc | 100 mAdc | 200 mW @ 25C | 600 C/W | 300 mW @ 25C | 400 C/W | -55 to +150 C | |
| LDTC144WET1G | 8P | 47 | 22 | SC-89 | 3000 (Tape & Reel) | 50 Vdc | 50 Vdc | 100 mAdc | 200 mW @ 25C | 600 C/W | 300 mW @ 25C | 400 C/W | -55 to +150 C | |
| S-LDTC114EET1G Series | N/A | N/A | N/A | SC-89 | N/A | 50 Vdc | 50 Vdc | 100 mAdc | 200 mW @ 25C | 600 C/W | 300 mW @ 25C | 400 C/W | -55 to +150 C | |
| OFF CHARACTERISTICS | ||||||||||||||
| Collector-Base Cutoff Current (ICBO) | 100 nAdc (VCB = 50 V, IE = 0) | |||||||||||||
| Collector-Emitter Cutoff Current (ICEO) | 500 nAdc (VCE = 50 V, IB = 0) | |||||||||||||
| Emitter-Base Cutoff Current (IEBO) | Max 0.5 mAdc (for LDTC114EET1G Series) | |||||||||||||
| Collector-Base Breakdown Voltage (V(BR)CBO) | 50 Vdc (IC = 10 A, IE = 0) | |||||||||||||
| Collector-Emitter Breakdown Voltage (V(BR)CEO) (Note 3) | 50 Vdc (IC = 2.0 mA, IB = 0) | |||||||||||||
| ON CHARACTERISTICS (Note 3) | ||||||||||||||
| DC Current Gain (hFE) (VCE = 10 V, IC = 5.0 mA) | Min 35, Typ 60, Max 80 (for LDTC114EET1G) | |||||||||||||
| Collector-Emitter Saturation Voltage (VCE(sat)) (IC = 10 mA, IB = 0.3 mA) | Max 0.25 Vdc | |||||||||||||
| Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) | Max 0.2 Vdc | |||||||||||||
| Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) | Min 4.9 Vdc | |||||||||||||
| Resistor R1 (Typ) | Min 1.5 k, Max 100 k (varies by model) | |||||||||||||
| Resistor R2 (Typ) | Min 0.038 k, Max 100 k (varies by model) | |||||||||||||
| Resistor Ratio R1/R2 (Typ) | Min 0.01, Max 20 (varies by model) | |||||||||||||
Notes:
- 1. FR-4 @ Minimum Pad
- 2. FR-4 @ 1.0 1.0 Inch Pad
- 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
Typical Applications
- Level Shifter: Connects 12 to 24 Volt circuits to logic.
- Open Collector Inverter: Inverts the input signal.
- Inexpensive, Unregulated Current Source.
2212131909_LRC-LDTC114TET1G_C5273210.pdf
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